Check Russia trade statistics of transistor mosfet imports from Malaysia. Find trade data analysis of Russia imports of transistor mosfet
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
12/Sep/2017 | 8541409000 | Photosensitive semiconductor devices - PCP FOR telecommunication equipment for mounting on circuit boards HOLE CHANNEL PCP with logical connections for The CHAIN DRIVER UPRAVLENENIYA power IGBT and MOSFET Transistor | *** | MALAYSIA | 7,72 | KG | 7.72 | 4026,89 | View Importer |
12/Sep/2017 | 8542399090 | Electronic integrated monolithic circuit DRIVER shutter control intended for use in voltage inverter IN THE COMPOSITION OF TELECOMMUNICATION EQUIPMENT IS DRIVER control of the power MOSFET and IGBT-transistors, the output current 2A, VOLT | *** | MALAYSIA | 0,07 | KG | 0.07 | 129,77 | View Importer |
06/Sep/2017 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | 0,02 | KG | 0.02 | 23,62 | View Importer |
06/Sep/2017 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | *** | KG | **** | 8,45 | View Importer |
06/Sep/2017 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | 0,04 | KG | 0.04 | 96,02 | View Importer |
08/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistor: MAXIMUM MOSFET drain-source voltage USI, B: 400 MAX CURRENT DRAIN-SOURCE WITH ISI MAX 25 C, A:. 10, the maximum gate-source voltage UZI MAX, V:. 30 RESISTANCE IN OPEN CHANNEL STATE BK RSI | *** | MALAYSIA | 9,56 | KG | 9.56 | 844,33 | View Importer |
19/Sep/2017 | 8541290000 | A field effect transistor is an integrated power MOSFET transistors with additional circuitry PROTECTION. For use in telecommunications equipment. NOT A CROWBAR ELEKTROOOBRUDOVANIYA. INDUSTRIAL APPLICATION OF THOSE | *** | MALAYSIA | 0,22 | KG | 0.22 | 449,75 | View Importer |
29/Sep/2017 | 8541290000 | Transistors, phototransistor EXCEPT: MOSFET, max. VOLTAGE 200V operating voltage 20V, current 4A Power dissipation 1,56VT VISHAY SEMICONDUCTORS VISHAY SEMICONDUCTORS SI4490DY-T1-GE3 12500 | *** | MALAYSIA | 12,5 | KG | 12.5 | 7049,4 | View Importer |
29/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistor: MOSFET VDS - breakdown voltage of the drain-source 80 V ID - CONSTANT CURRENT LEAKS: 20 A RDS ON - resistance of the drain-source 23 MOHMS VGS TH - THRESHOLD gate-source voltage: 3.1 V VGS - VOLTAGE the gate-source: 2 | *** | MALAYSIA | 6 | KG | 6 | 3581,09 | View Importer |
29/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistor: MOSFET VDS - breakdown voltage of the drain-source 80 V ID - CONSTANT CURRENT LEAKS: 23 A RDS ON - resistance of the drain-source 27 MOHMS VGS TH - THRESHOLD gate-source voltage 2 V VGS - VOLTAGE the gate-source: 20 | *** | MALAYSIA | 2,5 | KG | 2.5 | 804,81 | View Importer |
28/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation, BT 46, the voltage source-drain 150 V, the drain current 34 A HULL TYPE TO-220-3, CLASSIFICATION CODE 3417831 is for use in SMPS converts | *** | MALAYSIA | 0,3 | KG | 0.3 | 215,71 | View Importer |
26/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation 2.5W, the voltage source-drain 60, drain current 7 A HULL TYPE SOIC8, 6,340,128 CLASSIFICATION CODE FOR PCB RADIO EQUIPMENT INFINEON TECHNOLOGI | *** | MALAYSIA | 1,09 | KG | 1.09 | 300,55 | View Importer |
28/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFETs N-channel power dissipation of 1.9 W, a voltage source-drain 80 V, the drain current of 7.6 A, Type Body PowerPak, CLASSIFICATION CODE 6340128 FOR PCB RADIO EQUIPMENT FIELD MOS TR | *** | MALAYSIA | 0,01 | KG | 0.01 | 58,14 | View Importer |
20/Sep/2017 | 8541210000 | TRANSISTORS SEMI: Semiconductor NPN bipolar transistor structure, the power dissipation 0.31 BT Current 0.6 A, 40 V, Housing type SOT-23-3, CLASSIFICATION CODE 6340128 FOR PCB RADIO EQUIPMENT MOSFET | *** | MALAYSIA | 4,96 | KG | 4.96 | 2817,16 | View Importer |
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