Russia Trade Statistics of Transistor Mosfet Imports from Malaysia

Check Russia trade statistics of transistor mosfet imports from Malaysia. Find trade data analysis of Russia imports of transistor mosfet

Malaysia  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
12/Sep/2017 8541409000 Photosensitive semiconductor devices - PCP FOR telecommunication equipment for mounting on circuit boards HOLE CHANNEL PCP with logical connections for The CHAIN ​​DRIVER UPRAVLENENIYA power IGBT and MOSFET Transistor *** MALAYSIA 7,72 KG 7.72 4026,89 View Importer
12/Sep/2017 8542399090 Electronic integrated monolithic circuit DRIVER shutter control intended for use in voltage inverter IN THE COMPOSITION OF TELECOMMUNICATION EQUIPMENT IS DRIVER control of the power MOSFET and IGBT-transistors, the output current 2A, VOLT *** MALAYSIA 0,07 KG 0.07 129,77 View Importer
06/Sep/2017 8541290000 MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC *** MALAYSIA 0,02 KG 0.02 23,62 View Importer
06/Sep/2017 8541290000 MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC *** MALAYSIA *** KG **** 8,45 View Importer
06/Sep/2017 8541290000 MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC *** MALAYSIA 0,04 KG 0.04 96,02 View Importer
08/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistor: MAXIMUM MOSFET drain-source voltage USI, B: 400 MAX CURRENT DRAIN-SOURCE WITH ISI MAX 25 C, A:. 10, the maximum gate-source voltage UZI MAX, V:. 30 RESISTANCE IN OPEN CHANNEL STATE BK RSI *** MALAYSIA 9,56 KG 9.56 844,33 View Importer
19/Sep/2017 8541290000 A field effect transistor is an integrated power MOSFET transistors with additional circuitry PROTECTION. For use in telecommunications equipment. NOT A CROWBAR ELEKTROOOBRUDOVANIYA. INDUSTRIAL APPLICATION OF THOSE *** MALAYSIA 0,22 KG 0.22 449,75 View Importer
29/Sep/2017 8541290000 Transistors, phototransistor EXCEPT: MOSFET, max. VOLTAGE 200V operating voltage 20V, current 4A Power dissipation 1,56VT VISHAY SEMICONDUCTORS VISHAY SEMICONDUCTORS SI4490DY-T1-GE3 12500 *** MALAYSIA 12,5 KG 12.5 7049,4 View Importer
29/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistor: MOSFET VDS - breakdown voltage of the drain-source 80 V ID - CONSTANT CURRENT LEAKS: 20 A RDS ON - resistance of the drain-source 23 MOHMS VGS TH - THRESHOLD gate-source voltage: 3.1 V VGS - VOLTAGE the gate-source: 2 *** MALAYSIA 6 KG 6 3581,09 View Importer
29/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistor: MOSFET VDS - breakdown voltage of the drain-source 80 V ID - CONSTANT CURRENT LEAKS: 23 A RDS ON - resistance of the drain-source 27 MOHMS VGS TH - THRESHOLD gate-source voltage 2 V VGS - VOLTAGE the gate-source: 20 *** MALAYSIA 2,5 KG 2.5 804,81 View Importer
28/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation, BT 46, the voltage source-drain 150 V, the drain current 34 A HULL TYPE TO-220-3, CLASSIFICATION CODE 3417831 is for use in SMPS converts *** MALAYSIA 0,3 KG 0.3 215,71 View Importer
26/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation 2.5W, the voltage source-drain 60, drain current 7 A HULL TYPE SOIC8, 6,340,128 CLASSIFICATION CODE FOR PCB RADIO EQUIPMENT INFINEON TECHNOLOGI *** MALAYSIA 1,09 KG 1.09 300,55 View Importer
28/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS: MOSFETs N-channel power dissipation of 1.9 W, a voltage source-drain 80 V, the drain current of 7.6 A, Type Body PowerPak, CLASSIFICATION CODE 6340128 FOR PCB RADIO EQUIPMENT FIELD MOS TR *** MALAYSIA 0,01 KG 0.01 58,14 View Importer
20/Sep/2017 8541210000 TRANSISTORS SEMI: Semiconductor NPN bipolar transistor structure, the power dissipation 0.31 BT Current 0.6 A, 40 V, Housing type SOT-23-3, CLASSIFICATION CODE 6340128 FOR PCB RADIO EQUIPMENT MOSFET *** MALAYSIA 4,96 KG 4.96 2817,16 View Importer

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Our market research report and Russia export statistics of transistor mosfet covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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