Russia Trade Statistics of Transistor Mosfet Imports from Taiwan China

Check Russia trade statistics of transistor mosfet imports from Taiwan China. Find trade data analysis of Russia imports of transistor mosfet

Taiwan China  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
14/Sep/2017 8541210000 N-channel MOS transistor, INTENDED FOR POWER DISTRIBUTION SYSTEMS car alarms MOSFET maximum constant drain-source voltage of 20 V, the power dissipation MILIVT 430 (0.43 BT), the maximum drain current 2,8A, CDF *** TAIWAN CHINA 0,58 KG 0.58 927,63 View Importer
14/Sep/2017 8541210000 N-channel MOS transistor, INTENDED FOR POWER DISTRIBUTION SYSTEMS car alarms MOSFET maximum constant drain-source voltage 60V, power dissipation MILIVT 150 (0,15VT), the maximum drain current 0.3A, Bldg *** TAIWAN CHINA 0,3 KG 0.3 162,72 View Importer
07/Sep/2017 8541210000 N-channel MOS transistors operating under saturated ASSEMBLY WITH BLOCKS temperature protection, overcurrent protection and voltage is intended to distribute power to the Car Alarm System MOSFET drain-source voltage Transit *** TAIWAN CHINA 0,71 KG 0.71 3172,74 View Importer
07/Sep/2017 8541210000 Transistor ASSEMBLY SMD INTENDED FOR USE IN TELECOMMUNICATIONS EQUIPMENT ASSEMBLY transistor consisting of two N-channel MOSFETs and P-channel individual transistors, the constant drain current through the channel 500 milliamps *** TAIWAN CHINA 0,37 KG 0.37 765,33 View Importer
11/Sep/2017 8542399010 MONOLITHIC INTEGRATED MICROCHIP / CHANNEL FIELD DRIVER N-channel transistor MOSFET POWERED 12B LOCKING AND OUTPUT SERIES COMPENSATION FEEDBACK ADP3650; APPLY TO TELECOMMUNICATIONS NETWORKS AND DATA TRANSMISSION, ADP3650JRZ; TLD *** TAIWAN CHINA 0,03 KG 0.03 260,86 View Importer
05/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source 950, CURRENT LEAKAGE 38 A, the power dissipation *** TAIWAN CHINA 0,16 KG 0.16 186,68 View Importer
06/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. VOLTAGE Drain-Source Breakdown 70 V, 35 A LEAKAGE CURRENT, POWER 40 CS. lint *** TAIWAN CHINA 18,8 KG 18.8 5141,75 View Importer
27/Sep/2017 8541290000 Transistors with power dissipation MORE 1W. (NO ELECTRICAL SCRAP) MOSFET power dissipation 57W INFINEON TECHNOLOGIES WITHOUT TRADEMARK B / H B BSZ520N15NS3 G / H 9 *** TAIWAN CHINA 0,02 KG 0.02 7,94 View Importer
30/Sep/2017 8541290000 TRAZISTORY SEMICONDUCTOR, DISPERSION OVER POWER TRANSISTORS 1W :, EXCEPT phototransistor: MOSFET-TRANSISTOR, N-CHANNEL IN BLOCK TO-247. TECHNOLOGY X2-CLASS (ULTRA JUNCTION). VOLTAGE source-drain: 650V. Current: 80A. Channel resistance - *** TAIWAN CHINA 3,36 KG 3.36 1476,84 View Importer
20/Sep/2017 8541290000 Transistors for use in fiber-optic technology TRANSISTOR MOSFET P-CH 60V 3A SOT-23-6 DIODES INC., CHINA NO NO 3000 *** TAIWAN CHINA 4,9 KG 4.9 543,26 View Importer
21/Sep/2017 8541290000 Insulated-gate bipolar transistor, power 200W RASSEIVANIYA- .; FIELD MOSFET, N-CHANNEL, 125W power dissipation. (ELECTRICAL EQUIPMENT ARE NOT CROWBAR). APPLICATION: CONSTRUCTION OF RADIO-ELECTRONIC EQUIPMENT FOR INSTALLATION bipole *** TAIWAN CHINA 2,77 KG 2.77 467,04 View Importer
21/Sep/2017 8541290000 Other transistors, phototransistor EXCEPT: MOSFETs with channel N type intended for devices of industrial electronics. Breakdown voltage of the drain-source of 100 V, 1.7 A LEAKAGE CURRENT, POWER 2 watts. CASING SOT-223-4. LOCATED in the tape, pack *** TAIWAN CHINA 0,01 KG 0.01 2,75 View Importer
21/Sep/2017 8541290000 Other transistors, phototransistor EXCEPT: MOSFETs with channel N TYPE SMD HELD FOR DEVICES INDUSTRIAL ELECTRONICS. VOLTAGE Drain-Source Breakdown 25 V, 60 A LEAKAGE CURRENT, power dissipation 3W. HOUSING *** TAIWAN CHINA 0,02 KG 0.02 15,82 View Importer
20/Sep/2017 8541210000 Transistors, power dissipation less than 1 W, is a set electricity meter SERIES NP73. TRANSISTOR, power dissipation 0.36 WATT MOSFET P-CH -50 10 OHM SOT23 FAIRCHILD FAIRCHILD BSS84 SOT23 12000 *** TAIWAN CHINA 0,43 KG 0.43 363,39 View Importer
28/Sep/2017 8541210000 TRANSISTORS, SUITABLE FOR USE IN ELECTRICAL ASSEMBLY FOR GENERAL PURPOSE: MOSFET, N-CHANNEL, the maximum drain-source voltage (VDS) 300 VOLTS, silicon, continuous drain current (ID) .55A, BODY 6UDFN, dissipates MOSCHNOS *** TAIWAN CHINA 0,6 KG 0.6 1809,44 View Importer

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Our market research report and Russia export statistics of transistor mosfet covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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