Check Russia import data of transistor mosfet under HS code 85. Get import data of Russia for HS code 85
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
07/Nov/2017 | 8541290000 | Silicon semiconductor wafers with a field effect transistor (MOSFET), which is used in MANUFACTURING MOSFET and hybrid assemblies. | DMS | CHINA | 1057 | PC | 0.6 | 1169,47 | View Importer |
10/Nov/2017 | 8541290000 | POWER Field transistors insulated gate, is used for DC / DC converters (NOT A CROWBAR ELECTRIC EQUIPMENT). SBORKA- transistor power modules MOSFET, TYPE SEMICONDUCTOR - silicon carbide. Power Dissipation 1668 BT, | WITHOUT A TRADEMARK | *** | 6 | PC | 1.3 | 2677,5 | View Importer |
14/Nov/2017 | 8541290000 | SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: MOSFET-TRANSISTORS, N-CHANNEL USED IN INSTRUMENT for surface mounting. TYPE SEMICONDUCTOR - silicon, power dissipation 46 Tues. | INFINEON | *** | 5673 | PC | 0.98 | 4657,61 | View Importer |
27/Nov/2017 | 8541290000 | TRAZISTORY SEMICONDUCTOR, DISPERSION OVER POWER 1W: N-channel field effect unipolar MOS TRANSISTOR GIGAMOS POWER MOSFET; Power dissipation 1390VT; TYPE SEMICONDUCTOR - silicon, used for the surface mounting on circuit boards | IXYS | *** | 80 | PC | 0.8 | 510,07 | View Importer |
07/Nov/2017 | 8541290000 | A field effect transistor is an integrated power MOSFET transistors with additional circuitry PROTECTION. For use in telecommunications equipment. NOT A CROWBAR ELEKTROOOBRUDOVANIYA. INDUSTRIAL APPLICATIONS | STMICROELECTRONICS | *** | 10000 | PC | 1.1 | 2259,02 | View Importer |
13/Nov/2017 | 8542399010 | MONOLITHIC INTEGRATED MICROCHIP / down DC VOLTAGE WITH STABILIZER integrated power MOSFET (MOSFET) transistors operate in a mode current control with a fixed frequency SERIES ADP2301. APPLY substituted | ANALOG DEVICES | *** | 12000 | PC | 0.148 | 7847,6 | View Importer |
13/Nov/2017 | 8541290000 | A field effect transistor is an integrated power MOSFET transistors with additional circuitry PROTECTION. For use in telecommunications equipment. NOT A CROWBAR ELEKTROOOBRUDOVANIYA. INDUSTRIAL APPLICATIONS | STMICROELECTRONICS | *** | 2000 | PC | 0.22 | 450,69 | View Importer |
17/Nov/2017 | 8541290000 | Transistor: SERIES COOLMOS MOSFETs "IPD50R3K0CEAUMA1", with the powerful. DIFFUSION 26 W; SERIES SUPERMESH "STN1HNK60" With powerful. DISPERSION 3.3 Tues. TYPE SEMICONDUCTOR SILICON. | INFINEON TECHNOLOGIES | *** | 11500 | PC | 5.732 | 1419,41 | View Importer |
07/Nov/2017 | 8541290000 | FIELD TRANSISTOR IRLR120NPBF TIR (metal- insulator - SEMICONDUCTOR) MOSFET, N-CHANNEL, high power (> 1W). TYPE OF MOUNTING - SURFACE. VOLTAGE Drain-Source Breakdown - 100 V; The breakdown voltage of the gate-source - 16 V; Power Dissipation | ABSENT | *** | 2025 | PC | 1.332 | 471,91 | View Importer |
08/Nov/2017 | 8541290000 | Parts for assemblage and repair of car amplifier audio frequency metal-oxide field effect transistors IRF 3205 MOSFET 200W (MOS METALL OCSIDE) 2600 PCS. SUPPLIED AS COMPONENTS for their own needs PREDPRIYATIYA.POGRESHNOST SHIPMENT +/- 5% of CO | PRIDE | KOREA REPUBLIC OF | 2600 | PC | 5.2 | 390 | View Importer |
13/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 200W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF5210PBF B / 10 H | *** | CHINA | 0,06 | KG | 0.06 | 21,75 | View Importer |
13/Sep/2017 | 8541210000 | Bipolar transistor power dissipation less than 1 Tues. (NOT SCRAP ELECTRIC) transistors with power dissipation LESS THAN 1W. (NOT SCRAP ELECTRIC) MOSFET power dissipation of 350 MW: Power 250mW NXP SEMICONDUCTORS WITHOUT THAT | *** | CHINA | 0,11 | KG | 0.11 | 41,59 | View Importer |
13/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 2.5W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF7416TRPBF B / 30 H | *** | CHINA | 0,07 | KG | 0.07 | 32,37 | View Importer |
11/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS, power dissipation 32-375 BT imported as raw materials (materials) for assembling the electronic module (card), studio flash units, portable mains power supply, the device raising and lowering of flash bulbs, the MOSFET | *** | CHINA | 0,7 | KG | 0.7 | 270,25 | View Importer |
04/Sep/2017 | 8541290000 | SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: N-channel MOSFET transistors TYPE SEMICONDUCTOR - silicon, the SRT-VOLTAGE SOURCE 65V output power of 60W, the working speed of 1GHz, power dissipation 79VT, drain current 7A. STMICROELECTRONICS NV | *** | JAPAN | 0,03 | KG | 0.03 | 192,56 | View Importer |