Russia Import Data of Transistor Mosfet under HS Code 8541

Check Russia import data of transistor mosfet under HS code 8541. Get import data of Russia for HS code 8541

8541  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
07/Nov/2017 8541290000 Silicon semiconductor wafers with a field effect transistor (MOSFET), which is used in MANUFACTURING MOSFET and hybrid assemblies. DMS CHINA 1057 PC 0.6 1169,47 View Importer
10/Nov/2017 8541290000 POWER Field transistors insulated gate, is used for DC / DC converters (NOT A CROWBAR ELECTRIC EQUIPMENT). SBORKA- transistor power modules MOSFET, TYPE SEMICONDUCTOR - silicon carbide. Power Dissipation 1668 BT, WITHOUT A TRADEMARK *** 6 PC 1.3 2677,5 View Importer
14/Nov/2017 8541290000 SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: MOSFET-TRANSISTORS, N-CHANNEL USED IN INSTRUMENT for surface mounting. TYPE SEMICONDUCTOR - silicon, power dissipation 46 Tues. INFINEON *** 5673 PC 0.98 4657,61 View Importer
27/Nov/2017 8541290000 TRAZISTORY SEMICONDUCTOR, DISPERSION OVER POWER 1W: N-channel field effect unipolar MOS TRANSISTOR GIGAMOS POWER MOSFET; Power dissipation 1390VT; TYPE SEMICONDUCTOR - silicon, used for the surface mounting on circuit boards IXYS *** 80 PC 0.8 510,07 View Importer
07/Nov/2017 8541290000 A field effect transistor is an integrated power MOSFET transistors with additional circuitry PROTECTION. For use in telecommunications equipment. NOT A CROWBAR ELEKTROOOBRUDOVANIYA. INDUSTRIAL APPLICATIONS STMICROELECTRONICS *** 10000 PC 1.1 2259,02 View Importer
13/Nov/2017 8541290000 A field effect transistor is an integrated power MOSFET transistors with additional circuitry PROTECTION. For use in telecommunications equipment. NOT A CROWBAR ELEKTROOOBRUDOVANIYA. INDUSTRIAL APPLICATIONS STMICROELECTRONICS *** 2000 PC 0.22 450,69 View Importer
17/Nov/2017 8541290000 Transistor: SERIES COOLMOS MOSFETs "IPD50R3K0CEAUMA1", with the powerful. DIFFUSION 26 W; SERIES SUPERMESH "STN1HNK60" With powerful. DISPERSION 3.3 Tues. TYPE SEMICONDUCTOR SILICON. INFINEON TECHNOLOGIES *** 11500 PC 5.732 1419,41 View Importer
07/Nov/2017 8541290000 FIELD TRANSISTOR IRLR120NPBF TIR (metal- insulator - SEMICONDUCTOR) MOSFET, N-CHANNEL, high power (> 1W). TYPE OF MOUNTING - SURFACE. VOLTAGE Drain-Source Breakdown - 100 V; The breakdown voltage of the gate-source - 16 V; Power Dissipation ABSENT *** 2025 PC 1.332 471,91 View Importer
08/Nov/2017 8541290000 Parts for assemblage and repair of car amplifier audio frequency metal-oxide field effect transistors IRF 3205 MOSFET 200W (MOS METALL OCSIDE) 2600 PCS. SUPPLIED AS COMPONENTS for their own needs PREDPRIYATIYA.POGRESHNOST SHIPMENT +/- 5% of CO PRIDE KOREA REPUBLIC OF 2600 PC 5.2 390 View Importer
13/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 200W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF5210PBF B / 10 H *** CHINA 0,06 KG 0.06 21,75 View Importer
13/Sep/2017 8541210000 Bipolar transistor power dissipation less than 1 Tues. (NOT SCRAP ELECTRIC) transistors with power dissipation LESS THAN 1W. (NOT SCRAP ELECTRIC) MOSFET power dissipation of 350 MW: Power 250mW NXP SEMICONDUCTORS WITHOUT THAT *** CHINA 0,11 KG 0.11 41,59 View Importer
13/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 2.5W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF7416TRPBF B / 30 H *** CHINA 0,07 KG 0.07 32,37 View Importer
11/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS, power dissipation 32-375 BT imported as raw materials (materials) for assembling the electronic module (card), studio flash units, portable mains power supply, the device raising and lowering of flash bulbs, the MOSFET *** CHINA 0,7 KG 0.7 270,25 View Importer
04/Sep/2017 8541290000 SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: N-channel MOSFET transistors TYPE SEMICONDUCTOR - silicon, the SRT-VOLTAGE SOURCE 65V output power of 60W, the working speed of 1GHz, power dissipation 79VT, drain current 7A. STMICROELECTRONICS NV *** JAPAN 0,03 KG 0.03 192,56 View Importer
01/Sep/2017 8541290000 Other transistors, phototransistors EXCEPT: TRANSISTOR, low-voltage power MOSFET, CASING - TO-263-3, QTY CHANNELS - 1 BREAKDOWN VOLTAGE CURRENT-SOURCE - - 40 V, DC CURRENT LEAKAGE / FLOW - - 100 A, RESISTANCE CURRENT-SOURCE - 3.5 mOHMS, VOLTAGE *** CHINA 1,6 *** 1.6 1704,5 View Importer

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