Russia Import Data of Wat under HS Code 8541290000

Check Russia import data of wat under HS code 8541290000. Get import data of Russia for HS code 8541290000

8541290000  
STAT DECLARATION NO CUSTOMS CODE BROKER OR DECLARANT NUMBER DIRECTION DIRECTION EN CUSTOMS MODE SENDER ID SENDER EXPORTER NAME SENDING COUNTRY CODE SENDING COUNTRY SENDER ADDRESS SENDER ADDRESS EN OKTAT SENDER TOTAL ITEMS NUMBER OF PLACES RECIPIENT INN RECIPIENT RECIPIENT COUNTRY CODE RECIPIENT COUNTRY DESTINATION ADDRESS DESTINATION ADDRESS EN RECEIVER OKATO TIN FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT EN RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT EN OKATO RESPONSIBLE FOR FINANCIAL SETTLEMENT TRADING COUNTRY CODE TRADING COUNTRY TOTAL CUSTOMS VALUE CUSTOMS VALUE CURRENCY CODE TIN OF THE DECLARANT NAME OF THE DECLARANT NAME OF THE DECLARANT EN ADDRESS OF THE DECLARANT ADDRESS OF THE DECLARANT EN OKPO DECLARANT COUNTRY OF DEPARTURE COUNTRY OF DEPARTURE EN COUNTRY CODE OF DEPARTURE COUNTRY CODE OF DESTINATION COUNTRY OF DESTINATION COUNTRY DESTINATION INDICATION OF CONTAINER TRAFFIC DELIVERY CONDITION CODE GOODS DELIVERY POINT PLACE CONTRACT CURRENCY CODE TOTAL AMOUNT ON THE ACCOUNT EXCHANGE RATE TRANSPORT AT THE BORDER CODE TRANSPORT AT THE BORDER PRODUCT DESCRIPTION AND SPECIFICATIONS MANUFACTURER COMPANY MANUFACTURER COMPANY EN PRODUCT PLACES QUANTITY ADDITIONAL UNIT COUNTRY OF ORIGIN CODE GROSS WEIGHT KG PREFERENCES PREFERENCES EN QUOTA INVOICE VALUE SYMPTOM CCC METHOD FOR DETERMINING THE VEHICLE CUSTOMS COST RELEASE DATE OF CARGO PAYMENT AMOUNT USD PAYMENT AMOUNT RUB
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
01/Nov/2017 8541290000 Field-effect transistors, power dissipation of 235 watts, the voltage source-drain 400, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption, ON SEMICONDUCTOR, CHINA *** 35 PC 0.225 103,55 View Importer
27/Nov/2017 8541290000 MOSFET: With NPN-crossing "VSKH56-16,115" COMMON dissipation of 1.3 W, collector-emitter voltage 80V; N-channel - "IPD50R3K0CEAUMA1" SERIES COOLMOS CE COMMON dissipation of 26 watts and the breakdown voltage of the drain-source 550V; "FCPF NEXPERIA *** 146200 PC 271.575 49518,91 View Importer
30/Nov/2017 8541290000 Transistor module (IGBT / IGBT) N-TYPE STRUCTURE WITH BUILT-wheeling diode. Surge capacity of more than 1 watt. Designed for use in power converters, motor drives, in wind turbines and others. NOT SCRAP EL. INFINEON GERMANY 14 PC 24.25 9443,28 View Importer
27/Sep/2017 8541290000 POWERFUL N-channel MOS transistors: "IPD50R3K0CEAUMA1" and "IPD50R3K0CEBTMA1" SERIES COOLMOS CE COMMON dissipation of 26 watts and the breakdown voltage of the drain-source 550V; "TK15A20D, S4X (S" Since power dissipation of 35W, drain-source voltage 200V INFINEON, COOLMOS *** *** *** 470.733 44806,92 View Importer
14/Sep/2017 8541290000 FETs high electron mobility (HEMT), C dissipation of 20 W, 6 TSR. (NOT SCRAP ELECTRIC) APPLICATION: CONSTRUCTION electronic equipment for PCB mounting. With the dissipation of 6 watt POWER PAC *** MALAYSIA 2,5 KG 2.5 45360 View Importer
14/Sep/2017 8541290000 TRANSISTOR. MODEL "2N2907A" -4000 PCS. The product is a bipolar transistor wire PNP TYPE cylindrical body PCB. Power dissipation up to 1.8 watts. Voltage of 60 volts. NOT A phototransistor. : SUPPLIED SC *** CHINA 1,43 KG 1.43 4696,95 View Importer
05/Sep/2017 8541290000 TRANSISTOR. MODEL "IRF630NPBF" -112 PCS. The product is a field effect transistor with the maximum power DISPERSION to 82 watts and a voltage between the source-drain to 200 volts. Is designed in surface mount TO-220AB. : INTERN *** VIETNAM 0,32 KG 0.32 113,23 View Importer
08/Sep/2017 8541290000 TRANSISTORS dissipation of 1W or more: a field effect transistor 2SK3599-01MR: ST EMX512SC 37 watts for an analog mixing console YAMAHA CORPORATION YAMAHA YAMAHA WD844201 3 *** INDONESIA 0,01 KG 0.01 3,65 View Importer
13/Sep/2017 8541290000 Transistors, EXCEPT phototransistor is used as a component of other technical equipment and not intended for independent use: TRANSISTOR, voltage 300V, current 0,5A, power dissipation of 1 watt. They are used as SOS *** GERMANY 36 KG 36 14569,26 View Importer
04/Sep/2017 8541290000 TRANSISTOR is used in the pre-output stage of radio transmitting equipment for power amplification, power dissipation 83.3 watts does not apply to means of fire control, have no function encryption (CRYPTOGRAPHY), transistors: TIM5964- *** JAPAN 0,27 KG 0.27 3447,52 View Importer
07/Sep/2017 8541290000 Transistors, power dissipation of 520 watts use at the preset output stage of radio transmitting equipment for power amplification does not apply to means of fire control, have no function encryption (CRYPTOGRAPHY), transistors 747-: IXTT *** TAIWAN CHINA 0,59 KG 0.59 3417,97 View Importer
11/Sep/2017 8541290000 Transistors, power dissipation 25 watts are used in the pre-output stage of radio transmitting equipment for power amplification does not apply to means of fire control, have no function encryption (CRYPTOGRAPHY), transistors: ULN2003 - *** CHINA 8,83 KG 8.83 1657,4 View Importer
12/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS: SEMICONDUCTOR MODULE insulated-gate bipolar transistor, power dissipation is 60 watts, collector-emitter voltage of 600 V, 19 A CURRENT CODE OKP 3,417,810, INTENDED FOR USE IN pulse source PI *** THAILAND 0,21 KG 0.21 225,01 View Importer
27/Sep/2017 8541290000 POWERFUL N-channel MOS transistors: "IPD50R3K0CEAUMA1" and "IPD50R3K0CEBTMA1" SERIES COOLMOS CE COMMON dissipation of 26 watts and the breakdown voltage of the drain-source 550V; "TK15A20D, S4X (S" Since power dissipation of 35W, drain-source voltage 200V; "FCPF29 Silo *** UNITED STATES 470,73 KG 470.73 44806,92 View Importer
27/Sep/2017 8541290000 Other transistors; INSTALLED INSIDE INDUSTRIAL COMPUTER: TRANSISTOR 10 WATT, 2.2 AMP NXP NXP BLF1822-10 7 *** UNITED STATES 0,25 KG 0.25 466,27 View Importer

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