Lookup Russia import statistics of transistor mosfet. Get Russia trade data of transistor mosfet imports with all trading partners.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
21/Sep/2017 | 9032890000 | CONTROL UNIT ENGINE: CONTROL IN BLOCK - DRIVER FOR ENGINE power transistors with field control (MOSFET or IGBT) for surface mounting on printed circuit boards. It is designed to transmit control signals CONTROLLER | *** | CHINA | 1,49 | *** | 1.49 | 1735,36 | View Importer |
07/Nov/2017 | 8541290000 | Silicon semiconductor wafers with a field effect transistor (MOSFET), which is used in MANUFACTURING MOSFET and hybrid assemblies. | DMS | CHINA | 1057 | PC | 0.6 | 1169,47 | View Importer |
10/Nov/2017 | 8541290000 | POWER Field transistors insulated gate, is used for DC / DC converters (NOT A CROWBAR ELECTRIC EQUIPMENT). SBORKA- transistor power modules MOSFET, TYPE SEMICONDUCTOR - silicon carbide. Power Dissipation 1668 BT, | WITHOUT A TRADEMARK | *** | 6 | PC | 1.3 | 2677,5 | View Importer |
14/Nov/2017 | 8541290000 | SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: MOSFET-TRANSISTORS, N-CHANNEL USED IN INSTRUMENT for surface mounting. TYPE SEMICONDUCTOR - silicon, power dissipation 46 Tues. | INFINEON | *** | 5673 | PC | 0.98 | 4657,61 | View Importer |
27/Nov/2017 | 8541290000 | TRAZISTORY SEMICONDUCTOR, DISPERSION OVER POWER 1W: N-channel field effect unipolar MOS TRANSISTOR GIGAMOS POWER MOSFET; Power dissipation 1390VT; TYPE SEMICONDUCTOR - silicon, used for the surface mounting on circuit boards | IXYS | *** | 80 | PC | 0.8 | 510,07 | View Importer |
07/Nov/2017 | 8541290000 | A field effect transistor is an integrated power MOSFET transistors with additional circuitry PROTECTION. For use in telecommunications equipment. NOT A CROWBAR ELEKTROOOBRUDOVANIYA. INDUSTRIAL APPLICATIONS | STMICROELECTRONICS | *** | 10000 | PC | 1.1 | 2259,02 | View Importer |
13/Nov/2017 | 8542399010 | MONOLITHIC INTEGRATED MICROCHIP / down DC VOLTAGE WITH STABILIZER integrated power MOSFET (MOSFET) transistors operate in a mode current control with a fixed frequency SERIES ADP2301. APPLY substituted | ANALOG DEVICES | *** | 12000 | PC | 0.148 | 7847,6 | View Importer |
13/Nov/2017 | 8541290000 | A field effect transistor is an integrated power MOSFET transistors with additional circuitry PROTECTION. For use in telecommunications equipment. NOT A CROWBAR ELEKTROOOBRUDOVANIYA. INDUSTRIAL APPLICATIONS | STMICROELECTRONICS | *** | 2000 | PC | 0.22 | 450,69 | View Importer |
17/Nov/2017 | 8541290000 | Transistor: SERIES COOLMOS MOSFETs "IPD50R3K0CEAUMA1", with the powerful. DIFFUSION 26 W; SERIES SUPERMESH "STN1HNK60" With powerful. DISPERSION 3.3 Tues. TYPE SEMICONDUCTOR SILICON. | INFINEON TECHNOLOGIES | *** | 11500 | PC | 5.732 | 1419,41 | View Importer |
07/Nov/2017 | 8541290000 | FIELD TRANSISTOR IRLR120NPBF TIR (metal- insulator - SEMICONDUCTOR) MOSFET, N-CHANNEL, high power (> 1W). TYPE OF MOUNTING - SURFACE. VOLTAGE Drain-Source Breakdown - 100 V; The breakdown voltage of the gate-source - 16 V; Power Dissipation | ABSENT | *** | 2025 | PC | 1.332 | 471,91 | View Importer |
08/Nov/2017 | 8541290000 | Parts for assemblage and repair of car amplifier audio frequency metal-oxide field effect transistors IRF 3205 MOSFET 200W (MOS METALL OCSIDE) 2600 PCS. SUPPLIED AS COMPONENTS for their own needs PREDPRIYATIYA.POGRESHNOST SHIPMENT +/- 5% of CO | PRIDE | KOREA REPUBLIC OF | 2600 | PC | 5.2 | 390 | View Importer |
13/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 200W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF5210PBF B / 10 H | *** | CHINA | 0,06 | KG | 0.06 | 21,75 | View Importer |
13/Sep/2017 | 8541210000 | Bipolar transistor power dissipation less than 1 Tues. (NOT SCRAP ELECTRIC) transistors with power dissipation LESS THAN 1W. (NOT SCRAP ELECTRIC) MOSFET power dissipation of 350 MW: Power 250mW NXP SEMICONDUCTORS WITHOUT THAT | *** | CHINA | 0,11 | KG | 0.11 | 41,59 | View Importer |
13/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 2.5W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF7416TRPBF B / 30 H | *** | CHINA | 0,07 | KG | 0.07 | 32,37 | View Importer |
11/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS, power dissipation 32-375 BT imported as raw materials (materials) for assembling the electronic module (card), studio flash units, portable mains power supply, the device raising and lowering of flash bulbs, the MOSFET | *** | CHINA | 0,7 | KG | 0.7 | 270,25 | View Importer |
Our market research report and Russia export statistics of transistor mosfet covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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