Lookup Russia e v imports under HS code 8541210000 from Thailand. Search e v import data under HS code 8541210000 from Thailand.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
09/Sep/2017 | 8541210000 | Bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 65 V, the maximum collector current of 100 mA. CASING SOT-23-3. Power dissipation 0.3 Tues. Located on the tape, packed in plastic bags. : ON SEMICONDU | *** | THAILAND | 0,01 | KG | 0.01 | 0,8 | View Importer |
09/Sep/2017 | 8541210000 | PNP bipolar transistors TYPE SMD HELD FOR DEVICES INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 65 V, a collector current of 100 mA, the power dissipation of 0.3 TSR. CASING SOT-23-3. LOCATED ON TAPE PACKED: In | *** | THAILAND | 0,01 | KG | 0.01 | 0,9 | View Importer |
09/Sep/2017 | 8541210000 | MOSFETs with channel N / P SMD TYPE USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the source-drain 60, LEAKAGE CURRENT 0.51 A, the power dissipation of 0.96 CS. BODY SOIC-8. Located on the tape, the UPA: KO | *** | THAILAND | 0,02 | KG | 0.02 | 24,64 | View Importer |
09/Sep/2017 | 8541210000 | MOSFETs with channel P type intended for devices of industrial electronics. Breakdown voltage of the drain-source of 100 V, LEAKAGE CURRENT 0.12 A 360 MW. CASING SOT-23-3. LOCATED in the tape, packed in a plastic bag. : MICROCHIP TECH | *** | THAILAND | 0,05 | KG | 0.05 | 41,27 | View Importer |
12/Sep/2017 | 8541210000 | SEMICONDUCTOR TRANSISTORS: DUAL MOSFET N - CHANNEL, power dissipation 0.31 VT, the voltage source-drain 20, current 0.75 A CLASSIFICATION CODE 6340128 FOR PCB RADIO EQUIPMENT ON SEMICONDUCTOR ON SEMICONDUCT | *** | THAILAND | 0,01 | KG | 0.01 | 3,49 | View Importer |
12/Sep/2017 | 8541210000 | SEMICONDUCTOR TRANSISTORS: MOSFET P-channel, power dissipation of 540 MW, the voltage source-drain 20 V, current 780 MA CLASSIFICATION CODE 6340128 FOR PCB RADIO EQUIPMENT INFINEON TECHNOLOGIES INFINEON IRLML6302 | *** | THAILAND | *** | KG | **** | 3,37 | View Importer |
25/Sep/2017 | 8541210000 | TRANSISTOR. MODEL "BC847B, 215" -33 pcs. The product is a semiconductor transistor NPN-C TYPE DISPERSION CAPACITY 250 milli-watts and a collector-emitter voltage of 45 volts. Is designed in surface mount package. : NEXPERIA NEXPE | *** | THAILAND | 0,01 | KG | 0.01 | 4,7 | View Importer |
25/Sep/2017 | 8541210000 | TRANSISTOR. MODEL "BC817-40,215" -64 pcs. The product is a bipolar transistor with a semiconductor NPN-TYPE DISPERSION WITH MAXIMUM CAPACITY 250 milli-watts and a voltage between the collector-emitter to 45 volts. Is designed in: Housing for | *** | THAILAND | 0,01 | KG | 0.01 | 9,62 | View Importer |
25/Sep/2017 | 8541210000 | TRANSISTOR. MODEL "BC848ALT1G" -883 PCS. The product is a bipolar transistor with the maximum power DISPERSION 225 milli-watts and a voltage between the collector-emitter to 30 volts. : Semiconductors NPN-type. STRUCTURAL made in the case SAT-23 | *** | THAILAND | 0,02 | KG | 0.02 | 38,4 | View Importer |
27/Sep/2017 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 W, used in the system of industrial electronics bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 50 V, maximum collector current 0.5 | *** | THAILAND | 0,01 | KG | 0.01 | 1,99 | View Importer |
28/Sep/2017 | 8541210000 | TRANSISTORS dissipation of less than 1W, EXCEPT phototransistor, ARE NOT CROWBAR electrical equipment, used in the manufacture RADOELEKTRONNOY EQUIPMENT: TRANSISTOR MMBT3906LT3G is bipolar PNP transistors in SMD versions. | *** | THAILAND | 21,9 | KG | 21.9 | 3377,17 | View Importer |