Russia E V Imports under HS Code 8541290000 from Japan

Lookup Russia e v imports under HS code 8541290000 from Japan. Search e v import data under HS code 8541290000 from Japan.

8541290000   Japan  
STAT DECLARATION NO CUSTOMS CODE BROKER OR DECLARANT NUMBER DIRECTION DIRECTION EN CUSTOMS MODE SENDER ID SENDER EXPORTER NAME SENDING COUNTRY CODE SENDING COUNTRY SENDER ADDRESS SENDER ADDRESS EN OKTAT SENDER TOTAL ITEMS NUMBER OF PLACES RECIPIENT INN RECIPIENT RECIPIENT COUNTRY CODE RECIPIENT COUNTRY DESTINATION ADDRESS DESTINATION ADDRESS EN RECEIVER OKATO TIN FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT EN RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT EN OKATO RESPONSIBLE FOR FINANCIAL SETTLEMENT TRADING COUNTRY CODE TRADING COUNTRY TOTAL CUSTOMS VALUE CUSTOMS VALUE CURRENCY CODE TIN OF THE DECLARANT NAME OF THE DECLARANT NAME OF THE DECLARANT EN ADDRESS OF THE DECLARANT ADDRESS OF THE DECLARANT EN OKPO DECLARANT COUNTRY OF DEPARTURE COUNTRY OF DEPARTURE EN COUNTRY CODE OF DEPARTURE COUNTRY CODE OF DESTINATION COUNTRY OF DESTINATION COUNTRY DESTINATION INDICATION OF CONTAINER TRAFFIC DELIVERY CONDITION CODE GOODS DELIVERY POINT PLACE CONTRACT CURRENCY CODE TOTAL AMOUNT ON THE ACCOUNT EXCHANGE RATE TRANSPORT AT THE BORDER CODE TRANSPORT AT THE BORDER PRODUCT DESCRIPTION AND SPECIFICATIONS MANUFACTURER COMPANY MANUFACTURER COMPANY EN PRODUCT PLACES QUANTITY ADDITIONAL UNIT COUNTRY OF ORIGIN CODE GROSS WEIGHT KG PREFERENCES PREFERENCES EN QUOTA INVOICE VALUE SYMPTOM CCC METHOD FOR DETERMINING THE VEHICLE CUSTOMS COST RELEASE DATE OF CARGO PAYMENT AMOUNT USD PAYMENT AMOUNT RUB
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
02/Nov/2017 8541290000 Semiconductor FET power dissipation 31.2VT, VOLTAGE 15V, to the power amplifier TELECOMMUNICATIONS INDUSTRY N / FLM1213-6F - 2 pcs / JOM NOT NOT WASTE / NOT MILITARY NOT DOUBLE PURPOSE / NOT TO EQUIPMENT. SUMITOMO JAPAN 2 PC 0.21 432,9 View Importer
22/Nov/2017 8541290000 MODULE transistors IS IGBT-transistor assembly with an insulated gate for controlling nutrition in telecommunications equipment. INPUT VOLTAGE 15.5, collector-emitter voltage 1700 V, OUTPUT MITSUBISHI JAPAN 6 PC 12 8789,59 View Importer
04/Sep/2017 8541290000 SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: N-channel MOSFET transistors TYPE SEMICONDUCTOR - silicon, the SRT-VOLTAGE SOURCE 65V output power of 60W, the working speed of 1GHz, power dissipation 79VT, drain current 7A. STMICROELECTRONICS NV *** JAPAN 0,03 KG 0.03 192,56 View Importer
05/Sep/2017 8541290000 Transistors, EXCEPT phototransistor power dissipation 1 W: POWER MODULE IGBT (transistor) for frequency conversion AC EEKTROTOKA in engines, electrical PRIBORAHMOSCHNOST DISPERSION 1.3 KW, the maximum voltage COLLECT *** JAPAN 87,76 KG 87.76 25691,28 View Importer
10/Sep/2017 8541290000 SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: MOSFET-TRANSISTORS, N-CHANNEL USED IN INSTRUMENT for surface mounting. TYPE SEMICONDUCTOR - SILICON, voltage 650 V, power dissipation of 660 Tues IXYS IXYS IXYS NO I *** JAPAN 8,21 KG 8.21 650,92 View Importer
12/Sep/2017 8541290000 MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 30 V *** JAPAN 0,01 KG 0.01 22,46 View Importer
12/Sep/2017 8541290000 MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. Calculated on the breakdown voltage of 20 V, *** JAPAN 0,01 KG 0.01 19,42 View Importer
08/Sep/2017 8541290000 SEMICONDUCTOR BIPOLAR TRANSISTOR. The collector current of 80 A. -EMITTER collector voltage of 300 V. Power Dissipation 400W. PRIMENENIE- INDUSTRIAL AND CONSUMER ELECTRONICS:: IXYS INTEGRATED CIRCUITS. PHILIPPINES IXYS INTEGRATED CIRCUITS IXBT32N300HV I *** JAPAN 0,17 KG 0.17 1,92 View Importer
21/Sep/2017 8541290000 Power FET SMD BASED gallium arsenide are intended for use in electronics PARTICULARLY IN bandpass amplifier, devices Radiocommunications - NOT A WASTE ELECTRICAL OR CROWBAR: VOLTAGE *** JAPAN 0,09 KG 0.09 1221,74 View Importer
16/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 1.5 V *** JAPAN 1,74 KG 1.74 39,29 View Importer
16/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 2.1 V *** JAPAN 3,76 KG 3.76 85,46 View Importer
20/Sep/2017 8541290000 Other transistors, phototransistors EXCEPT: MOS TRANSISTOR ROHS: corresponding view INSTALLATION: MOS TRANSISTOR NUMBER CHANNEL 1 CHANNEL TRANSISTOR POLARITY: N-CHANNEL VDS - breakdown voltage of the drain-source: 150 V ID - CONSTANT CURRENT LEAKS: 78 A RDS ON *** JAPAN 12,87 KG 12.87 3670,58 View Importer
20/Sep/2017 8541290000 Other transistors EXCEPT phototransistor: MOSFET Transistor Polarity: N-CHANNEL VDS - breakdown voltage of the drain-source: 250 V ID - CONSTANT CURRENT LEAKS: 57 A RDS ON - resistance of the drain-source 33 MOHMS VGS - gate-source voltage: 30 V PD - *** JAPAN 0,3 KG 0.3 389,65 View Importer
20/Sep/2017 8541290000 Other transistors EXCEPT phototransistor: MOS TRANSISTOR TYPE ASSEMBLY: SMD / SMT PACKAGING / UNIT: SO-8 NUMBER OF CHANNELS 2 POLARITY TRANSISTOR: N VDS - breakdown voltage of the drain-source 30 V PD - power dissipation: 2 W ID - CONTINUOUS CURRENT LEAKS: 4.9 *** JAPAN 11,5 KG 11.5 3415,01 View Importer
30/Sep/2017 8541290000 Transistors for use in telecommunication devices / NOT SCRAP electrical equipment, not for use in explosive atmospheres MILITARY /: MOSFET. Transistor Polarity - P-CHANNEL. RATED gate voltage - +/- 20V. VOLTAGE *** JAPAN 0,01 KG 0.01 5,3 View Importer

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Our market research report and Russia export statistics of e v covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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