Russia E V Imports under HS Code 8541290000 from Malaysia

Lookup Russia e v imports under HS code 8541290000 from Malaysia. Search e v import data under HS code 8541290000 from Malaysia.

8541290000   Malaysia  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
14/Sep/2017 8541290000 Modules insulated-gate bipolar transistor (IGBT) "FF600R12ME4" With powerful. DISPERSION 4050 W, collector-emitter voltage 1200V, gate-emitter voltage 20V. TYPE SEMICONDUCTOR SILICON. : INTENDED FOR USE IN HIGH POWER PRE *** MALAYSIA 41,5 KG 41.5 11097,73 View Importer
06/Sep/2017 8541290000 Spare parts for REMONTA- semiconductor transistor: / NOT SCRAP / / NOT WASTE / NOT FOR EQUIPMENT. WORKS. In potentially explosive atmospheres / / NOT FOR VEHICLES / NOT MILITARY / / NOT DUAL-USE / semiconductor transistor power dissipation of 10 W, *** MALAYSIA 0,05 KG 0.05 45,73 View Importer
12/Sep/2017 8541290000 TRANSISTOR DESIGNED FOR USE IN telecommunications equipment for mounting on circuit boards P-channel MOS KEY maximum constant drain-source voltage 12V, the maximum drain current is 16A, the power of 2.5 W, SOIC-8 BODY TEMPERATURE RANGE - *** MALAYSIA 2,17 KG 2.17 5460,82 View Importer
06/Sep/2017 8541290000 MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC *** MALAYSIA 0,02 KG 0.02 23,62 View Importer
06/Sep/2017 8541290000 MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC *** MALAYSIA *** KG **** 8,45 View Importer
06/Sep/2017 8541290000 MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC *** MALAYSIA 0,04 KG 0.04 96,02 View Importer
08/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistor: MAXIMUM MOSFET drain-source voltage USI, B: 400 MAX CURRENT DRAIN-SOURCE WITH ISI MAX 25 C, A:. 10, the maximum gate-source voltage UZI MAX, V:. 30 RESISTANCE IN OPEN CHANNEL STATE BK RSI *** MALAYSIA 9,56 KG 9.56 844,33 View Importer
29/Sep/2017 8541290000 Transistors, phototransistor EXCEPT: MOSFET, max. VOLTAGE 200V operating voltage 20V, current 4A Power dissipation 1,56VT VISHAY SEMICONDUCTORS VISHAY SEMICONDUCTORS SI4490DY-T1-GE3 12500 *** MALAYSIA 12,5 KG 12.5 7049,4 View Importer
29/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistor: MOSFET VDS - breakdown voltage of the drain-source 80 V ID - CONSTANT CURRENT LEAKS: 20 A RDS ON - resistance of the drain-source 23 MOHMS VGS TH - THRESHOLD gate-source voltage: 3.1 V VGS - VOLTAGE the gate-source: 2 *** MALAYSIA 6 KG 6 3581,09 View Importer
29/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistor: MOSFET VDS - breakdown voltage of the drain-source 80 V ID - CONSTANT CURRENT LEAKS: 23 A RDS ON - resistance of the drain-source 27 MOHMS VGS TH - THRESHOLD gate-source voltage 2 V VGS - VOLTAGE the gate-source: 20 *** MALAYSIA 2,5 KG 2.5 804,81 View Importer
19/Sep/2017 8541290000 FET TRANSISTOR SEMICONDUCTOR 1W power dissipation for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container VISHAY INTERTECHNOLOGY INC. VISHAY IRFD420 *** MALAYSIA 1,38 KG 1.38 757,62 View Importer
21/Sep/2017 8541290000 TRANSISTOR prednazanachen SOLELY FOR RECEIVER ONKYO TX-SR608, BIPOLAR, NPN - TYPE; VOLTAGE 20V output power 20W,:. Packed in KART.KOROB. "ONKYO ASIA ELECTRONICS SDN. BHD." MALAYSIA, "ONKYO" 2202843 10 *** MALAYSIA 0,1 KG 0.1 42,66 View Importer
21/Sep/2017 8541290000 TRANSISTOR prednazanachen SOLELY FOR RECEIVER ONKYO TX-SR608, BIPOLAR, NPN - TYPE; VOLTAGE 20V output power 20W,:. Packed in KART.KOROB. "ONKYO ASIA ELECTRONICS SDN. BHD." MALAYSIA, "ONKYO" 2202833 10 *** MALAYSIA 0,1 KG 0.1 43,66 View Importer
20/Sep/2017 8541290000 TRANSISTORS SILICON C dissipation 1 W FOR VARIOUS RADIO AND ELECTRICAL PURPOSE, bipolar NPN silicon transistors, voltage 80V, N-RASSEIVANIYA1,5VT POWER CHANNEL TIR silicon transistors VOLTAGE 40V, M *** MALAYSIA 7,11 KG 7.11 2799 View Importer
20/Sep/2017 8541290000 Silicon Transistors C Power Dissipation 1 W FOR ELECTRONICS AND ELECTRICAL EQUIPMENT FOR VARIOUS PURPOSES, bipolar NPN silicon transistors, voltage 45V, power dissipation 4,6VT BIPOLAR NPN silicon transistors, voltage 50V, M *** MALAYSIA 7,76 KG 7.76 4341 View Importer

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