Russia E V Imports under HS Code 8541290000 from United States

Lookup Russia e v imports under HS code 8541290000 from United States. Search e v import data under HS code 8541290000 from United States.

8541290000   United States  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
11/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistor: FET TYPE N-CH, ON VOLTAGE 1000V, amperage 6A, the power dissipation of 2.5 BT 2 PCS. INCLUDED AS PART kit for geophysical instruments CMRS-B, ART. 100464251 - 1 pc., FOR USE IN OIL *** UNITED STATES 0,12 KG 0.12 119,78 View Importer
10/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 2.6 V *** UNITED STATES 12,6 KG 12.6 9025 View Importer
13/Sep/2017 8541290000 FET TRANSISTOR PD55003-E STMICROELECTRONICS PRODUCTION COMPANY IS RF MOSFETs. ADVANTAGES: LOW OPERATING CURRENT AND LOW VOLTAGE. Used in network switches, valves. Transistor Polarity: N-CHANNEL. ID *** UNITED STATES 1,94 KG 1.94 13068 View Importer
05/Sep/2017 8541290000 Field-effect transistors, power dissipation 104 W, 20 V, semiconductor - silicon are designed for logic circuits to control the parameters of their ENERGY,: VISHAY INTERTECHNOLOGY VISHAY INTERTECHNOLOGY, CHINA SIR440DP-T1-GE3 300 *** UNITED STATES 0,05 KG 0.05 650,64 View Importer
12/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 44,5 VT MOSFET power dissipation 55W MOSFET power dissipation 60W MOSFET power dissipation of 20 *** UNITED STATES 0,24 KG 0.24 121,49 View Importer
25/Sep/2017 8541290000 FET TRANSISTOR KSE350STU PRODUCED BY FAIRCHILD IS A bipolar transistor - BJT. Used in network switches, valves. CONFIGURATION: SINGLE. Transistor Polarity: PNP. VOLTAGE emitter-base (VEBO): 5 V. TR *** UNITED STATES 12,7 KG 12.7 5134,64 View Importer
29/Sep/2017 8541290000 Field-effect transistors, power dissipation of 2.5 W, a voltage source-drain -30 V, semiconductor - silicon are designed for logic circuits to control the parameters of their power, field effect transistors, power dissipation of 2.5 W, voltage and *** UNITED STATES 0,05 KG 0.05 48,15 View Importer
18/Sep/2017 8541290000 FET TRANSISTOR SEMICONDUCTOR power dissipation 3,2VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel VISHAY INTERTECHNOLOGY INC. VISHAY SI3437 *** UNITED STATES 0,06 KG 0.06 364,13 View Importer
18/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source 1 kV, 6.5 A LEAKAGE CURRENT, 160 POWER TSR. CDF *** UNITED STATES 0,08 KG 0.08 21,39 View Importer
18/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. The breakdown voltage of the drain-source 40 V, 259 A CURRENT LEAK, power 156 Tues CDF *** UNITED STATES 0,18 KG 0.18 70,58 View Importer
24/Sep/2017 8541290000 Other transistors, phototransistor EXCEPT: MOSFETs with channel N type intended for devices of industrial electronics. VOLTAGE Drain-Source Breakdown 20 V LEAKAGE CURRENT 8 A POWER 21.9 CS. BODY SO-8. LOCATED ON TAPE PACKED *** UNITED STATES 0,01 KG 0.01 5,22 View Importer
24/Sep/2017 8541290000 Other transistors, phototransistor EXCEPT: MOSFETs with channel P TYPE for single hole mounting on a printed circuit board adapted for devices of industrial electronics. VOLTAGE Drain-Source Breakdown 20 V CONTINUOUS LEAKAGE CURRENT 4 A POWER *** UNITED STATES 0,01 KG 0.01 1,77 View Importer
25/Sep/2017 8541290000 Bipolar transistors SILICON TOUCH: power dissipation and NOMIN.NAPRYAZHENIE DC: MODEL IB1191 - 7 watts and 50 V intended for use in the equipment GRAZHD.PRIMENENIYA, Switching Power Amplifiers AIR CONTROL SYSTEM *** UNITED STATES 5,3 KG 5.3 178500 View Importer
21/Sep/2017 8541290000 Transistors, EXCEPT phototransistor (SCRAP ELECTRIC) CLASSIFICATION CODE 63 4012, SM. ADDITION. TRANSISTOR, TRANSISTOR VOLTAGE 20V, the voltage in the transistor 48, the voltage 45 V NXP PMZ290UNE2YL ABSENT ABSENT 10 INFINEON BDP947H6327XTSA1 50 *** UNITED STATES 0,55 KG 0.55 565,41 View Importer
21/Sep/2017 8541290000 Transistors, EXCEPT phototransistor (SCRAP ELECTRIC) CLASSIFICATION CODE 63 4012, SM. ADDITION. TRANSISTOR, 48 V M / A-COM NO MRF158 23 *** UNITED STATES 0,05 KG 0.05 570,86 View Importer

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Our market research report and Russia export statistics of e v covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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