Check Russia import data of e v under HS code 8542323900. Get import data of Russia for HS code 8542323900
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
06/Nov/2017 | 8542323900 | Integrated circuits, monolithic, digital, dynamic random access memory (DRAM) K4B2G1646F-BCMA, VOLUME 2Gbps, 96 pin input voltage 1.5V, SIZE 13.3 * 7.5 * 1.1mm, for PROM.SBORKI monitor model LH55PMFPBGC / RU, HAS FUNCTIONS | SAMSUNG ELECTRONICS | KOREA REPUBLIC OF | 26880 | PC | 51.3 | 43029,14 | View Importer |
09/Nov/2017 | 8542323900 | Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 SO-DIMM 204 1600 GGC-PIN ECC, reservoirs 4 GB (512 MB X 8), used in industrial computer as RAM VOLTAGE 1.35 | ADVANTECH | *** | 4 | PC | 0.192 | 192,04 | View Importer |
28/Nov/2017 | 8542323900 | Electronic integrated circuits - Synchronous Dynamic Random Access Memory "K4T1G164QJ-BIE7000" double speed data transfer, memory capacity 1GB (UNITED 64MX16), 1.8V supply voltage, DRAM "K4T1G164QJ-BIE7000" Predna | SAMSUNG | *** | 600 | PC | 2.79 | 1134 | View Importer |
26/Sep/2017 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR | MICRON | *** | *** | *** | 88.32 | 163474,8 | View Importer |
01/Sep/2017 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR: UNI | *** | TAIWAN CHINA | 30,72 | *** | 30.72 | 56860,8 | View Importer |
01/Sep/2017 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR: UNI | *** | TAIWAN CHINA | 33,28 | *** | 33.28 | 61599,2 | View Importer |
02/Sep/2017 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with memory volume to 4 GB, a maximum frequency of 12 | *** | CHINA | 0,11 | *** | 0.11 | 149,6 | View Importer |
02/Sep/2017 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with memory volume to 4 GB maximum frequency of 80 | *** | UNITED STATES | 1,73 | *** | 1.73 | 1800 | View Importer |
06/Sep/2017 | 8542323900 | MEMORY ATP BT MEM SODIMM DDR2 2GB: textolite BOARD with active and passive elements to create a volatile memory for the current job in a labeler BIZERBA TYPE GLME, POWER SUPPLY +1.8 V. 250 MW. 2 GB ( | *** | GERMANY | 0,01 | KG | 0.01 | 272,65 | View Importer |
06/Sep/2017 | 8542323900 | BOARD LPB SRAM-SIMM GLP 4 MB Download now, 30 X 110 mm electronic card with active and passive elements: "RAM on the computer", is used to create volatile memory AT USTROYSTE for current activities. BIZERBA SE & CO. KG. BIZERBA BIZERBA | *** | GERMANY | 0,15 | KG | 0.15 | 576,58 | View Importer |
12/Sep/2017 | 8542323900 | Electronic integrated circuits: the dynamic memory (DRAM), 1 Gbps, the voltage 1.95 V, 166 MHz, 75 CURRENT MA, MICRON TECHNOLOGY INC MICRON TECHNOLOGY, UNITED STATES MICRON TECHNOLOGY, UNITED STATES MT46H64M16LFBF-6IT: B MEMORY 30 | *** | MEXICO | *** | KG | **** | 220,51 | View Importer |
05/Sep/2017 | 8542323900 | Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 DIMM 1600 MHz (PC3-12800) 240-PIN NON-ECC, reservoirs 8 GB 2 X (512 MB X 8), 1.35 VOLTAGE OR PERMANENT 1.5 CURRENT is used in industry COM | *** | TAIWAN CHINA | 0,05 | KG | 0.05 | 91,01 | View Importer |
05/Sep/2017 | 8542323900 | Electronic integrated circuits, MODEL "EDB8132B4PB-8D-F" - 17 PCS. The product is a synchronous dynamic random access memory of 8 GB and operating frequency to 400MHz. Operating voltage up to 1.8 V.: formed as an integrated MES | *** | TAIWAN CHINA | 0,52 | KG | 0.52 | 198,56 | View Importer |
08/Sep/2017 | 8542323900 | Dynamic random access memory (DRAM) without the encryption function (CRYPTOGRAPHY): MAP RAM for MFP BIZHUB 227/287/367 FOR 2 GB, of DDR3, the effective frequency of 1333 MHz, 1.5V SUPPLY VOLTAGE KONICA MINOLTA KONICA MINOLTA UK-211 | *** | CHINA | 0,66 | KG | 0.66 | 492,34 | View Importer |
11/Sep/2017 | 8542323900 | Dynamic random access memory (DRAM) without the encryption function (CRYPTOGRAPHY): MAP RAM for MFP BIZHUB 227/287/367 FOR 2 GB, of DDR3, the effective frequency of 1333 MHz, 1.5V SUPPLY VOLTAGE KONICA MINOLTA KONICA MINOLTA UK-211 | *** | CHINA | 0,21 | KG | 0.21 | 124,26 | View Importer |
Our market research report and Russia export statistics of e v covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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