Check Russia import data of e v under HS code 8542324500. Get import data of Russia for HS code 8542324500
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
09/Nov/2017 | 8542324500 | The IC chip non-volatile memory - electrically erasable programmable read-only memory,: | MICRON TECHNOLOGY, INC | *** | 25 | PC | 0.062 | 214,44 | View Importer |
29/Nov/2017 | 8542324500 | MONOLITHIC INTEGRATED CIRCUITS, P / N CY62167EV30LL-45BVXIT, static random access memory (SRAM) memory chips, MEMORY SIZE 16 MBIT supply voltage 3V, INTENDED FOR TELECOMMUNICATIONS EQUIPMENT NOT NOT SCRAP | ABSENT | THAILAND | 2000 | PC | 1.14 | 7640 | View Importer |
01/Nov/2017 | 8542324500 | INTEGRAL volatile MICROCIRCUIT STORAGE - static random access memory (SRAM). NOT AN ELECTRICAL CROWBAR. | CYPRESS | *** | 44 | PC | 0.48 | 2209,49 | View Importer |
28/Nov/2017 | 8542324500 | INTEGRAL volatile MICROCIRCUIT STORAGE - static random access memory (SRAM). SDRAM memory chips used for production of memory modules. NOT AN ELECTRICAL CROWBAR. | ALLIANCE MEMORY | *** | 86 | PC | 0.34 | 2031,31 | View Importer |
23/Nov/2017 | 8542324500 | Integrated circuits, monolithic, represents FLASH MEMORY is approved for use in telecommunications equipment. MEMORY SIZE 256K supply voltage of 4.5 to 5.5 V, operating temperature from -40 to +85 C. has no FUNC | SAMSUNG | *** | 500 | PC | 0.03 | 241,02 | View Importer |
30/Nov/2017 | 8542324500 | Integrated circuits, monolithic, represents the RAM (SRAM) is approved for use in telecommunications equipment. MEMORY SIZE 6MB (1M X 16), energized from 3 to 3.6 V, operating temperature from 0 to +70 C. NOT ON | EVERSPIN TECHNOLOGIES | *** | 3 | PC | 0.009 | 100,38 | View Importer |
15/Sep/2017 | 8542324500 | Electronic integrated circuits - High-performance dual-port static random access memory "IDT71024S15TYGI" WITH THE 128KH8, the operating voltage of 5V is designed for universal application in the electronics industry. : SRAM | *** | TAIWAN CHINA | 0,68 | KG | 0.68 | 517,5 | View Importer |
05/Sep/2017 | 8542324500 | Electronic integrated circuits: static memory (SRAM), 2 Mbit, 3 V, CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR, PHILIPPINES CYPRESS SEMICONDUCTOR, PHILIPPINES CY62136VLL-55ZI MEMORY 18 | *** | CHINA | 0,01 | KG | 0.01 | 46,39 | View Importer |
05/Sep/2017 | 8542324500 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS: static memory (SRAM), 4Mb, a voltage 5.5 V, current of 90 MA, CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR, PHILIPPINES CYPRESS SEMICONDUCTOR, PHILIPPINES CY7C1041D-10ZSXI MEMORY 110 | *** | CHINA | 0,11 | KG | 0.11 | 302,43 | View Importer |
05/Sep/2017 | 8542324500 | Electronic integrated circuits: static memory (SRAM), 16Mbps, voltage 3.6 V, current 175 MA, CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR, TAIWAN (CHINA) CYPRESS SEMICONDUCTOR, TAIWAN (CHINA) CY7C1069DV33-10ZSXI MEMORY 120 | *** | CHINA | 0,08 | KG | 0.08 | 5790,31 | View Importer |
08/Sep/2017 | 8542324500 | Integrated circuits, electronic, static random access memory (SRAM). MEMORY 1Mbit. Not recorded. SUPPLY VOLTAGE 5V. DIMENSIONS: 21.08 X 10.29 X 2.92MM. ARE NOT CROWBAR electrical equipment, have no function KRI: PT | *** | CHINA | *** | KG | **** | 7,26 | View Importer |
14/Sep/2017 | 8542324500 | Integrated circuits, electronic, static random access memory (SRAM). MEMORY 8Mbit. Not recorded. SUPPLY VOLTAGE 2.4-3.6V. DIMENSIONS: 18.51 X 10.26 X 1MM. ARE NOT CROWBAR ELECTRICAL EQUIPMENT, HAVE FUNKTSIIK: RI | *** | UNITED KINGDOM | 1,18 | KG | 1.18 | 2047,67 | View Importer |
14/Sep/2017 | 8542324500 | Integrated circuits, electronic, static random access memory (SRAM). MEMORY 8Mbit. Not recorded. SUPPLY VOLTAGE 2.4-3.6V. DIMENSIONS: 18.51 X 10.26 X 1MM. ARE NOT CROWBAR ELECTRICAL EQUIPMENT, HAVE FUNKTSIIK: RI | *** | UNITED KINGDOM | 0,5 | KG | 0.5 | 871,35 | View Importer |
09/Sep/2017 | 8542324500 | Electronic integrated circuits, memory devices, OTHER, NOT SCRAP EQUIPMENT, DOES NOT CONTAIN encryption function (CRYPTOGRAPHY); SCOPE: TELECOM. EQUIPMENT FOR INSTALLATION The FEE Memory (RAM) VOLTAGE: 1.4251.575, MEMORY 4 G, ART | *** | TAIWAN CHINA | 0,01 | KG | 0.01 | 125,59 | View Importer |
09/Sep/2017 | 8542324500 | Electronic integrated circuits, memory devices, OTHER, NOT SCRAP EQUIPMENT, DOES NOT CONTAIN encryption function (CRYPTOGRAPHY); SCOPE: TELECOM. EQUIPMENT FOR INSTALLATION The FEE Memory (RAM) VOLTAGE: 1.4251.575, MEMORY 2 G, ART | *** | TAIWAN CHINA | 0,01 | KG | 0.01 | 55,59 | View Importer |
Our market research report and Russia export statistics of e v covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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