Russia G B Imports under HS Code 8541 from Mexico

Lookup Russia g b imports under HS code 8541 from Mexico. Search g b import data under HS code 8541 from Mexico.

8541   Mexico  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
12/Sep/2017 8541210000 Bipolar transistors, power dissipation of 150 MW, voltage 50 V, semiconductor - silicon is intended for the generation and amplification of electrical oscillations,: TOSHIBA TOSHIBA, PHILIPPINES RN1107MFV 1000 *** MEXICO 0,6 KG 0.6 93,66 View Importer
06/Sep/2017 8541500000 INSTRUMENTS POLUPROVODNIKOVYE- sensors, whose operation is based on electronic properties of semiconductor materials for the repair and maintenance program CAR, CRANKSHAFT POSITION SENSOR FCA US LLC MOPAR NO K04686188 CHRYSLER GRAND V *** MEXICO 0,18 KG 0.18 148,58 View Importer
06/Sep/2017 8541500000 INSTRUMENTS POLUPROVODNIKOVYE- sensors, whose operation is based on electronic properties of semiconductor materials for the repair and maintenance program CAR, camshaft position sensor FCA US LLC MOPAR NO K05149054AC JEEP GR *** MEXICO 0,07 KG 0.07 11,64 View Importer
06/Sep/2017 8541409000 Optocouplers SEMICONDUCTOR: Photovoltaic SEMICONDUCTOR PCP for consumer electronics. TYPE SEMICONDUCTOR-multi-element (silicon and gallium arsenide) (NOT SCRAP ELECTRIC). Packed in a plastic container BROADCOM LIMITED BROAD *** MEXICO 2,91 KG 2.91 735,69 View Importer
13/Sep/2017 8541401000 Light emitting diodes: Light emitting diodes for consumer electronics. TYPE SEMICONDUCTOR - multi-element (gallium phosphide) (NOT INTENDED FOR LIGHTING EQUIPMENT NOT SCRAP ELECTRIC). Packed in plastic bags (scattering of small *** MEXICO 0,11 KG 0.11 86,69 View Importer
10/Sep/2017 8541290000 MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 84 VDC *** MEXICO 0,04 KG 0.04 151,39 View Importer
10/Sep/2017 8541210000 Bipolar transistors, for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Rated at CALL *** MEXICO *** KG **** 4,73 View Importer
10/Sep/2017 8541210000 Bipolar transistors, for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Rated at CALL *** MEXICO 0,02 KG 0.02 7,83 View Importer
10/Sep/2017 8541210000 Bipolar transistors, for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Rated at CALL *** MEXICO 0,01 KG 0.01 21,76 View Importer
10/Sep/2017 8541290000 MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 30 V *** MEXICO 0,02 KG 0.02 24,17 View Importer
15/Sep/2017 8541290000 MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC *** MEXICO 0,05 KG 0.05 80,1 View Importer
15/Sep/2017 8541401000 Standard LED, to be assembled on the electronic circuit board to indicate the operating modes of FEE. CROWBAR ARE NOT ELECTRIC. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : WE color- *** MEXICO 0,02 KG 0.02 36,15 View Importer
02/Sep/2017 8541100009 Other diodes, photodiodes THAN OR light-emitting diodes: diodes - a semiconductor wafer is cut into the crystal (located in the same building) for devices of industrial electronics: DIODES GENERAL PURPOSE. Reverse voltage of 600 V, the maximum *** MEXICO 0,13 *** 0.13 10,31 View Importer
15/Sep/2017 8541100009 Diode GENERAL PURPOSE .- / DATA / Maximum overcurrent 4 A, IF - DIRECT CURRENT 0.215 A, VF - forward voltage of 1.25 V AT 0.15 A, IR - 0.5 UA REVERSE CURRENT AT 50 V DIODE general- / DATA / - MAXIMUM CURRENT TRANSFER 2 A, B *** MEXICO 11,95 KG 11.95 475,74 View Importer
15/Sep/2017 8541290000 TRANSISTORS FIELD TRANSISTOR .- / DATA / -number of channel 1 POLARITY TRANSISTOR P, VDS - breakdown voltage of the drain-source - 20 V, ID - CONTINUOUS LEAKAGE CURRENT - 3.7 A, RDS ON - resistance of the drain-source 65 MOHMS, VGS - VOLTAGE the gate-source 12 V *** MEXICO 2,32 KG 2.32 1514,88 View Importer

Filter by HS Code

Filter by Country

Our market research report and Russia export statistics of g b covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

To get complete sunglass export statistics of Russia, simply fill the Request Demo Form. You can also drop your queries through info@exportgenius.in or +91-11-47048012.

Are you looking for Russia buyers or importers of g b        

Recent Searches for Russia Import Products