Lookup Russia integrated circuits imports under HS code 8542326900 from Taiwan China. Search integrated circuits import data under HS code 8542326900 from Taiwan China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
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17/Nov/2017 | 8542326900 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, ES FLASH EPROM memory capacity C 1Gbps, MODEL W25N01G, PART W25N01GVZEIG - 63 PCS. CUSTOM PACKAGING - Cut Tape. NOT SCRAP ELECTRIC, DO NOT WASTE. APPLY Telecommunication Equip | WINBOND | TAIWAN CHINA | 63 | PC | 0.11 | 92,96 | View Importer |
15/Nov/2017 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INDUSTRIAL EQUIPMENT ASSEMBLY "SAMSUNG" | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY | TAIWAN CHINA | 15360 | PC | 28.7 | 11926,84 | View Importer |
22/Nov/2017 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INDUSTRIAL EQUIPMENT ASSEMBLY "SAMSUNG" | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY | TAIWAN CHINA | 11520 | PC | 22.96 | 8955,41 | View Importer |
12/Nov/2017 | 8542326900 | Electronic integrated circuits Monolithic collected, SINGLE: electrically erasable programmable read-only memory (EEPROM FLASH-ES) with a storage capacity of 256 Gbps, DO NOT WASTE NOT | MICRON | TAIWAN CHINA | 2880 | PC | 7.29 | 79598,27 | View Importer |
27/Nov/2017 | 8542326900 | Electronic integrated circuits Monolithic collected, SINGLE: electrically erasable programmable read-only memory (EEPROM FLASH-ES) with a storage capacity of 256 Gbps, DO NOT WASTE NOT | MICRON | TAIWAN CHINA | 3840 | PC | 8.2 | 105927,68 | View Importer |
21/Nov/2017 | 8542326900 | Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL | MICRON | TAIWAN CHINA | 35000 | PC | 46.55 | 32200 | View Importer |
24/Nov/2017 | 8542326900 | Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL | MICRON | TAIWAN CHINA | 19000 | PC | 25.27 | 17480 | View Importer |
06/Sep/2017 | 8542326900 | Integrated circuits - electrically erasable rewritable read-only memory VOLTAGE 2 Operating temperature from - 40 to + 85 MB MEMORY 32: XILINX WITHOUT TK B / M XCF32PVOG48C B / M 120 | *** | TAIWAN CHINA | 0,26 | KG | 0.26 | 1991,39 | View Importer |
07/Sep/2017 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 8 GB is approved for use in telecommunications equipment. Supply voltage | *** | TAIWAN CHINA | 0,01 | KG | 0.01 | 5 | View Importer |
14/Sep/2017 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 1 GB is approved for use in telecommunications equipment. Supply voltage | *** | TAIWAN CHINA | *** | KG | **** | 135 | View Importer |
14/Sep/2017 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 16 GB is approved for use in telecommunications equipment. supply voltage | *** | TAIWAN CHINA | 0,01 | KG | 0.01 | 5,5 | View Importer |
15/Sep/2017 | 8542326900 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, memory capacity 1 GB, do not have the encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" Integrated circuits, monolithic, digital, flash-electro | *** | TAIWAN CHINA | 33,62 | KG | 33.62 | 11875,8 | View Importer |
28/Sep/2017 | 8542326900 | OTHER integrated circuits, chips FLASH MEMORY: 4GB. DOES NOT CONTAIN encryption function and cryptographic algorithms. SANDISK CORPORATION SANDISK SANDISK SDIN7DP2-4G 2084 | *** | TAIWAN CHINA | 0,46 | KG | 0.46 | 7460,72 | View Importer |
30/Sep/2017 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 16 GB is approved for use in telecommunications equipment. supply voltage | *** | TAIWAN CHINA | 0,02 | KG | 0.02 | 31,5 | View Importer |
20/Sep/2017 | 8542326900 | Integrated circuits, monolithic, digital, flash electrically erasable programmable read-only memory (flash EEPROM) F59L1G81MA-25TIG2Y, VOLUME 1 Gbit, 48-pin input voltage 2.7-3.6V, SIZE 20 * 12 * 1.2mm FOR PROM.SBORKI TV MODEL 1107 -002459 | *** | TAIWAN CHINA | 41 | KG | 41 | 18449,09 | View Importer |
Our market research report and Russia export statistics of integrated circuits covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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