Lookup Russia w d imports under HS code 8541290000 from Japan. Search w d import data under HS code 8541290000 from Japan.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
02/Nov/2017 | 8541290000 | Semiconductor FET power dissipation 31.2VT, VOLTAGE 15V, to the power amplifier TELECOMMUNICATIONS INDUSTRY N / FLM1213-6F - 2 pcs / JOM NOT NOT WASTE / NOT MILITARY NOT DOUBLE PURPOSE / NOT TO EQUIPMENT. | SUMITOMO | JAPAN | 2 | PC | 0.21 | 432,9 | View Importer |
13/Sep/2017 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON IGBT-Module FUJI ELECTRIC FUJI ELECTRIC 1MBI1500UE-330-E 4 FUJI E | *** | JAPAN | 329,3 | KG | 329.3 | 131293,82 | View Importer |
13/Sep/2017 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON; IGBT-Module FUJI ELECTRIC FUJI ELECTRIC 2MBI1400VXB-170P-50-M 10 | *** | JAPAN | 89,35 | KG | 89.35 | 18531,3 | View Importer |
14/Sep/2017 | 8541290000 | Transistors, phototransistor EXCEPT: SILICON Bipolar transistors, power dissipation of 2.0 W is used as an element in SMD mounting on circuit boards PRINTED FOR RADIO packaged in blister packs TAPE IN 1000 item in plastic cassette 1-DRAWER TRANZIS | *** | JAPAN | 13,97 | KG | 13.97 | 22859,02 | View Importer |
04/Sep/2017 | 8541290000 | SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: N-channel MOSFET transistors TYPE SEMICONDUCTOR - silicon, the SRT-VOLTAGE SOURCE 65V output power of 60W, the working speed of 1GHz, power dissipation 79VT, drain current 7A. STMICROELECTRONICS NV | *** | JAPAN | 0,03 | KG | 0.03 | 192,56 | View Importer |
05/Sep/2017 | 8541290000 | Transistors, EXCEPT phototransistor power dissipation 1 W: POWER MODULE IGBT (transistor) for frequency conversion AC EEKTROTOKA in engines, electrical PRIBORAHMOSCHNOST DISPERSION 1.3 KW, the maximum voltage COLLECT | *** | JAPAN | 87,76 | KG | 87.76 | 25691,28 | View Importer |
01/Sep/2017 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation of 110 W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TRANSISTOR SEMICONDUCTOR POWER RA | *** | JAPAN | 2,83 | *** | 2.83 | 804,6 | View Importer |
02/Sep/2017 | 8541290000 | Semiconductor field-effect transistors are designed for use in power amplifiers TELECOMMUNICATIONS SECTORS / NOT SCRAP, WASTE NOT / NOT WAR, NOT DUAL-USE / NO for equipment operating in explosive atmospheres / SEMICONDUCTOR | *** | JAPAN | 4,84 | *** | 4.84 | 74625,41 | View Importer |
10/Sep/2017 | 8541290000 | Semiconductor field-effect transistors are designed for use in power amplifiers telecommunications industry / NOT SCRAP, WASTE NOT, NOT MILITARY OR DUAL-USE NOT for equipment operating in explosive atmospheres / semiconductor | *** | JAPAN | 11,86 | KG | 11.86 | 222812,68 | View Importer |
12/Sep/2017 | 8541290000 | TRANSISTORS dissipation of 1W or more: a field effect transistor FDPF10N60ZUT SUT 42W for active speaker of FETs F25F60CPM-7600 S Power dissipation - 70 W for active speaker YAMAHA CORPORATION YAMAHA YAMAHA | *** | JAPAN | *** | KG | **** | 5,58 | View Importer |
01/Sep/2017 | 8541290000 | Bipolar transistors power dissipation 313 BT MODEL SKW25N120, ARTICLE SKW25N120FKSA1 - 43 PCS. NOT SCRAP ELECTRIC, DO NOT WASTE. DATA products are used in telecommunications equipment. CUSTOM PACKAGING - TUBA. : "INFINEON" INFI | *** | JAPAN | 0,02 | *** | 0.02 | 377,97 | View Importer |
04/Sep/2017 | 8541290000 | TRANSISTOR is used in the pre-output stage of radio transmitting equipment for power amplification, power dissipation 83.3 watts does not apply to means of fire control, have no function encryption (CRYPTOGRAPHY), transistors: TIM5964- | *** | JAPAN | 0,27 | KG | 0.27 | 3447,52 | View Importer |
21/Sep/2017 | 8541290000 | Power FET SMD BASED gallium arsenide are intended for use in electronics PARTICULARLY IN bandpass amplifier, devices Radiocommunications - NOT A WASTE ELECTRICAL OR CROWBAR: VOLTAGE | *** | JAPAN | 0,09 | KG | 0.09 | 1221,74 | View Importer |
16/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current of 100 A | *** | JAPAN | 0,28 | KG | 0.28 | 6,28 | View Importer |
16/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, PNP-CHANNEL, power dissipation 3 | *** | JAPAN | 0,4 | KG | 0.4 | 9,12 | View Importer |
Our market research report and Russia export statistics of w d covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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