Russia W D Imports under HS Code 8541290000 from Japan

Lookup Russia w d imports under HS code 8541290000 from Japan. Search w d import data under HS code 8541290000 from Japan.

8541290000   Japan  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
02/Nov/2017 8541290000 Semiconductor FET power dissipation 31.2VT, VOLTAGE 15V, to the power amplifier TELECOMMUNICATIONS INDUSTRY N / FLM1213-6F - 2 pcs / JOM NOT NOT WASTE / NOT MILITARY NOT DOUBLE PURPOSE / NOT TO EQUIPMENT. SUMITOMO JAPAN 2 PC 0.21 432,9 View Importer
13/Sep/2017 8541290000 Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON IGBT-Module FUJI ELECTRIC FUJI ELECTRIC 1MBI1500UE-330-E 4 FUJI E *** JAPAN 329,3 KG 329.3 131293,82 View Importer
13/Sep/2017 8541290000 Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON; IGBT-Module FUJI ELECTRIC FUJI ELECTRIC 2MBI1400VXB-170P-50-M 10 *** JAPAN 89,35 KG 89.35 18531,3 View Importer
14/Sep/2017 8541290000 Transistors, phototransistor EXCEPT: SILICON Bipolar transistors, power dissipation of 2.0 W is used as an element in SMD mounting on circuit boards PRINTED FOR RADIO packaged in blister packs TAPE IN 1000 item in plastic cassette 1-DRAWER TRANZIS *** JAPAN 13,97 KG 13.97 22859,02 View Importer
04/Sep/2017 8541290000 SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: N-channel MOSFET transistors TYPE SEMICONDUCTOR - silicon, the SRT-VOLTAGE SOURCE 65V output power of 60W, the working speed of 1GHz, power dissipation 79VT, drain current 7A. STMICROELECTRONICS NV *** JAPAN 0,03 KG 0.03 192,56 View Importer
05/Sep/2017 8541290000 Transistors, EXCEPT phototransistor power dissipation 1 W: POWER MODULE IGBT (transistor) for frequency conversion AC EEKTROTOKA in engines, electrical PRIBORAHMOSCHNOST DISPERSION 1.3 KW, the maximum voltage COLLECT *** JAPAN 87,76 KG 87.76 25691,28 View Importer
01/Sep/2017 8541290000 FET TRANSISTOR SEMICONDUCTOR power dissipation of 110 W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TRANSISTOR SEMICONDUCTOR POWER RA *** JAPAN 2,83 *** 2.83 804,6 View Importer
02/Sep/2017 8541290000 Semiconductor field-effect transistors are designed for use in power amplifiers TELECOMMUNICATIONS SECTORS / NOT SCRAP, WASTE NOT / NOT WAR, NOT DUAL-USE / NO for equipment operating in explosive atmospheres / SEMICONDUCTOR *** JAPAN 4,84 *** 4.84 74625,41 View Importer
10/Sep/2017 8541290000 Semiconductor field-effect transistors are designed for use in power amplifiers telecommunications industry / NOT SCRAP, WASTE NOT, NOT MILITARY OR DUAL-USE NOT for equipment operating in explosive atmospheres / semiconductor *** JAPAN 11,86 KG 11.86 222812,68 View Importer
12/Sep/2017 8541290000 TRANSISTORS dissipation of 1W or more: a field effect transistor FDPF10N60ZUT SUT 42W for active speaker of FETs F25F60CPM-7600 S Power dissipation - 70 W for active speaker YAMAHA CORPORATION YAMAHA YAMAHA *** JAPAN *** KG **** 5,58 View Importer
01/Sep/2017 8541290000 Bipolar transistors power dissipation 313 BT MODEL SKW25N120, ARTICLE SKW25N120FKSA1 - 43 PCS. NOT SCRAP ELECTRIC, DO NOT WASTE. DATA products are used in telecommunications equipment. CUSTOM PACKAGING - TUBA. : "INFINEON" INFI *** JAPAN 0,02 *** 0.02 377,97 View Importer
04/Sep/2017 8541290000 TRANSISTOR is used in the pre-output stage of radio transmitting equipment for power amplification, power dissipation 83.3 watts does not apply to means of fire control, have no function encryption (CRYPTOGRAPHY), transistors: TIM5964- *** JAPAN 0,27 KG 0.27 3447,52 View Importer
21/Sep/2017 8541290000 Power FET SMD BASED gallium arsenide are intended for use in electronics PARTICULARLY IN bandpass amplifier, devices Radiocommunications - NOT A WASTE ELECTRICAL OR CROWBAR: VOLTAGE *** JAPAN 0,09 KG 0.09 1221,74 View Importer
16/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current of 100 A *** JAPAN 0,28 KG 0.28 6,28 View Importer
16/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, PNP-CHANNEL, power dissipation 3 *** JAPAN 0,4 KG 0.4 9,12 View Importer

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