Check Ukraine import data of equipment under HS code 8541290010. Get import data of Ukraine for HS code 8541290010
| Date | HS Code | Product Description | Origin Country | Quantity | Net Weight [KGS] | Total Value [USD] | Importer Name |
|---|---|---|---|---|---|---|---|
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -2SK3078 - 8 pieces; Polvoyy, Voltage: 10 V, current: 0.5 A; Power: 3 Vt.Vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. Not is the equipment or protective systems for use vvybuhonebezpechnomu environment. Do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - Toshiba SemiconductorVyrobnyk - Toshiba Semiconductor. " | CHINA | ***** | 0.001 | 3.257004625 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -IRFPE50PBF - 20 pieces; Field; drain-source voltage: 800 V, drain current: 7.8 A, Power: 190 Watts. Used in the manufacture telekomunikatsiynohoobladnannya, civil use. It is no equipment or protective systemamydlya use in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - SemiconductorsVyrobnyk Vishay - Vishay Semiconductors. " | CHINA | ***** | 0.13 | 13.82856425 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -IRF1010NPBF - 30 pcs, Field, drain-source voltage of 55V, drain current 72A.Potuzhnist scattering 130Vt.- IRF3205ZPBF - 40 pcs, Field, drain-source voltage 55V, 75A drain current, power dissipation 170Vt. - IRF530NPBF - 100 pieces; Field; Napruhastik-source: 100V; current drain: 17A; power dissipation: 79Vt. - IRF7341TRPBF- 100 pieces; Field; drain-source voltage of 55 V, current flow: 4,7 A; power: 2W. - IRF7389PBF - 200 pieces; Field; current: 7,3A, Voltage 30V drain-source, power dissipation, 2,5Vt. - IRF7416TRPBF - 100 pieces; Field; Napruhast -30V to-drain, drain current: -10A, Power: 2,5Vt. - IRF8313TRPBF - 50 pieces; Field; vytik30V-voltage drain, drain current: 9,7A; Power: 2W. - IRF9Z24NPBF - 1000 pieces; Field; Power drain-source -55 V drain current: -12 A; Power: 45W. - IRFH5010TR2 - 40 pcs, Field, drain-source voltage of 100 V, the drain current of 13 A; Power: 3.6 watt. - IRLB3813 - 50 pieces, Field, H apruha drain-source 30 V, drain current of 260 A, 230 W power dissipation. -IRLML0030TRPBF - 2500 pcs; Field; Power drain-source: 30V, drain current 5,3A, power dissipation 1,3Vt. - IRLML0060TRPBF - 3000 pcs; Field; Napruhastik-source: 60 V; Current drain: 2,7A, Power dissipation: 1.25 W. -IRLR2905TRPBF - 200 pieces; Field; Power drain-source 16 V; Drain current: 42A, power dissipation of 110 watts. - IRLU024N - 40 pieces; Field; Power flow-vytik60V, 56A drain current. Powerful Number scattering 42Vt. Used inproduction telecommunications equipment, civilian purposes. Not yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi. Do not have a membership transmitters or transmitters and a means pryymachiv.Ne spetspryznachennya.Krayina production - CNTorhovelna mark - International RectifierVyrobnyk - International Rectifier " | CHINA | ***** | 4.177 | 626.0785965 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -FDS4935A - 100 pieces; Field; drain-source voltage of -30V, the drain current of 7A. Potuzhnistrozsiyuvannya 2W. Used in the manufacture of telecommunications equipment, civilian purposes. It is not equipment dlyazastosuvannya or protective systems in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - Fairchild SemiconductorVyrobnyk - Fairchild Semiconductor. " | CHINA | ***** | 0.028 | 10.34288591 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -2SK2850 - 10 pieces; Polvoyy, Voltage: 900 V; current: 6 A, Power: 125 Vt.Vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. It is not equipment or protective systems for use vvybuhonebezpechnomu environment. Do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - ElectricVyrobnyk Fuji - Fuji Electric. " | CHINA | ***** | 0.112 | 10.4855723 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -TIRLR2905 - 50 pieces; Field; drain-source voltage of 16 V, drain current 42 A; Power dissipation of 110 watts. Vyrobnytstvitelekomunikatsiynoho used in equipment for civil use. It is not abozahysnymy systems equipment for use in potentially explosive environments. mistyatv not composed of transmitters and receivers or transmitters. It is not zasobomspetspryznachennya.Krayina production - CNTorhovelna mark - International RectifierVyrobnyk - International Rectifier. " | CHINA | ***** | 0.042 | 14.79620328 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -TIRF530 - 50 pieces; Field; drain-source voltage: 100V, a drain current 17 A, power dissipation of 79 watts. Vyrobnytstvitelekomunikatsiynoho used in equipment for civil use . It is not abozahysnymy systems equipment for use in potentially explosive environments. mistyatv not composed of transmitters and receivers or transmitters. It is not zasobomspetspryznachennya.Krayina production - PHTorhovelna mark - International RectifierVyrobnyk - International Rectifier. " | PHILIPPINES | ***** | 0.182 | 12.06413438 | View Importer |
| 25/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -IRF7495PBF - 20 pieces; Field; drain source voltage of 100 V, drain current: 7.3 A; Power: 2.5 watts. Used in production telekomunikatsiynohoobladnannya, civilian purposes. It is no equipment or protective systemamydlya use in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.Krayina not a means of production - MYTorhovelna mark - Infineon (IRF) Manufacturer - Infineon (IRF). " | MALAYSIA | ***** | 0.007 | 9.784170526 | View Importer |
| 18/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -IRF2907ZPBF - 116 pieces; Field; voltage: 75 V, current 170 A, Power: 330 Vt.Vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. It is not equipment or protective systems for use vvybuhonebezpechnomu environment. Do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - International RectifierVyrobnyk - International Rectifier. " | CHINA | ***** | 0.32 | 116.9000157 | View Importer |
| 18/Apr/2017 | 8541290010 | "1. Field transistors are powerful silicon, n-channel, with an isolated gate: -APT38F80B2 - 3 pcs; Field; Voltage: 800 V; Strength: 41 A; Power: 1040 W. Used in the production of telecommunications equipment, civil assignment. Or protective systems for use in explosive environments.It does not contain transmitters or transmitters and receivers.It is not a means of special purpose.Crime production - CNTormal brand - Microsemi Corporation Producer - Microsemi Corporation. " | CHINA | ***** | 0.013 | 21.71411087 | View Importer |
| 18/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -STP50NE10 - 4 pieces; Field; Voltage: 100V; Current: 50 A, Power: 180 Vt.Vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. It is not equipment or protective systems for use vvybuhonebezpechnomu environment. Do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - STMicroelectronicsVyrobnyk - STMicroelectronics. " | CHINA | ***** | 0.001 | 1.742872554 | View Importer |
| 12/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: - ZVN4525GTA - 1000 pieces, Field, ha tensions Power: 2.5 -10 V; typtranzystoru: N-channel. Operating temperature: -55 to +150 C. . inproduction used telecommunications equipment, civilian purposes. No yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi. Do not have a membership transmitters or transmitters and a means pryymachiv.Ne spetspryznachennya.Krayina production - CNTorhovelna mark - Diodes Inc / ZetexVyrobnyk - Diodes Inc / Zetex ". | CHINA | ***** | 0.365 | 278.5591541 | View Importer |
| 11/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -IRF7313PBF - 20 pieces; Field; drain-source voltage of 30 V, drain current: 5,2 A; Power: 2 watts. Used in the manufacture of telecommunications equipment , civilian purposes. It is no equipment or protective systems dlyazastosuvannya in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.Krayina not a means of production - MYTorhovelna mark - Infineon (IRF) Manufacturer - Infineon (IRF). " | MALAYSIA | ***** | 0.003 | 4.77811044 | View Importer |
| 11/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -IRF9317PBF - 20 pieces; Field; drain-source voltage: -30 V drain current: -16 A; Power: 2.5 watts. Used in production telekomunikatsiynohoobladnannya, civilian purposes. It is no equipment or protective systemamydlya use in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.Krayina not a means of production - PLTorhovelna mark - Infineon (IRF) Manufacturer - Infineon (IRF). " | POLAND | ***** | 0.003 | 8.617975089 | View Importer |
| 11/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: - AO4409 - 10 pieces, Field, Voltage: -30 V, current: -12.8 A; Power: 2 Vt.- AON6786 - 10 pieces; Field ; voltage: 30 V, current 12 a, Power: 83 Vt.- AON7702 - 10 pieces, Field, Voltage: 3 0 V, current 37 a, Power: 23 Vt.Vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. It is not equipment or protective systems for use vvybuhonebezpechnomu environment. Do not have a membership aboperedavachiv transmitters and receivers. It is not a means spetspryznachennya.Krayi on production - CNTorhovelna mark - Alpha & Omega Semiconductor Inc.Vyrobnyk - Alpha & Omega Semiconductor Inc.. " | CHINA | ***** | 0.063 | 6.999900235 | View Importer |
Our market research report and Ukraine export statistics of equipment covers market share of Ukrainian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Ukraine. Few shipment records with a small number of important columns from Ukraine export data of sunglass are given above. Other hidden fields such as Ukrainian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Ukraine customs data of sunglass. To view more shipment records of sunglass export data of Ukraine, you can set a filter by Country Name or HS Code on the left side.
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