Check Ukraine import data of silicon under HS code 8541. Get import data of Ukraine for HS code 8541
| Date | HS Code | Product Description | Origin Country | Quantity | Net Weight [KGS] | Total Value [USD] | Importer Name |
|---|---|---|---|---|---|---|---|
| 28/Apr/2017 | 8541409000 | Photovoltaic modules with polycrystalline silicon type JAP6 (K) -60-270W 4VV power 270W, new rectangle aluminum body designed to convert solar energy into electricity. The modules snap connection distributor comprising bypass diodes (Bypass diodes), contain no blocking diodes and will not submit to its direct energy consumption - 7560 shtuk.Krayina origin - China, CN. | CHINA | ***** | 138726 | 714419.9999 | View Importer |
| 28/Apr/2017 | 8541409000 | Photovoltaic modules with polycrystalline silicon type JAP6 (K) -60-270W 4VV power 270W, new rectangle aluminum body designed to convert solar energy into electricity. The modules snap connection distributor comprising bypass diodes (Bypass diodes), contain no blocking diodes and will not submit to its direct energy consumption - 1680 shtuk.Krayina origin - China, CN. | CHINA | ***** | 30828 | 158760.0001 | View Importer |
| 28/Apr/2017 | 8541409000 | "1.Fotoэlektrychni panels for solar elektrychnyhstantsiy, polykrystallycheskoho silicon, alyumynievarama, face value of 260 W., 30.6V 8.5A, for peretvorennyasonyachnoyi energy code 35FV0177-2sht; Manufacturer TALESUN SOLAR GERMANY GmbH; trademark TALESUN SOLAR GERMANY GmbH; Country of TH ;. " | THAILAND | ***** | 36.2 | 227.3962182 | View Importer |
| 28/Apr/2017 | 8541409000 | Photovoltaic modules with polycrystalline silicon type JAP6 (K) -60-270W 4VV power 270W, new rectangle aluminum body designed to convert solar energy into electricity. The modules snap connection distributor comprising bypass diodes (Bypass diodes), contain no blocking diodes and will not submit to its direct energy consumption - 2520 shtuk.Krayina origin - China, CN. | CHINA | ***** | 46242 | 238140.0001 | View Importer |
| 28/Apr/2017 | 8541409000 | Photovoltaic modules with polycrystalline silicon type JAP6 (K) -60-270W 4VV power 270W, new rectangle aluminum body designed to convert solar energy into electricity. The modules snap connection distributor comprising bypass diodes (Bypass diodes), contain no blocking diodes and will not submit to its direct energy consumption - 840 shtuk.Krayina origin - China, CN. | CHINA | ***** | 15414 | 79380.00003 | View Importer |
| 28/Apr/2017 | 8541409000 | Photovoltaic modules with polycrystalline silicon type JAP6 (K) -60-270W 4VV power 270W, new rectangle aluminum body designed to convert solar energy into electricity. The modules snap connection distributor comprising bypass diodes (Bypass diodes), contain no blocking diodes and will not submit to its direct energy consumption - 4200 shtuk.Krayina origin - China, CN. | CHINA | ***** | 77070 | 396900.0002 | View Importer |
| 27/Apr/2017 | 8541409000 | "1.Polikrystalichnyy silicon photovoltaic modul.Yavlyaye assembled in a module silicon photovoltaic solar cells that convert sunlight directly into electricity. Torhovelnoy mark" "OSDA" "model: Bar fotoelektrychnaOSDA ODA320-36-M-26sht.OSDA ODA310-36 -P-26sht.vyrobnyk: "" NINGBO OSDA SOLAR CO., LTD "" Country of CN.. " | CHINA | ***** | 1092 | 5569.200067 | View Importer |
| 27/Apr/2017 | 8541409000 | "1.Polikrystalichnyy silicon photovoltaic modul.Yavlyaye assembled in a module silicon photovoltaic solar cells that convert sunlight directly into electricity. Torhovelnoy mark" "YINGLI" "Model: photovoltaic panel YINGLI YLP315-35B-26sht.YINGLI YLM335-36B- 26sht. manufacturer: "" SHENZHEN YINGLI NEW ENERGY RESOURCES CO., LTD "" Country of CN.. " | CHINA | ***** | 1413 | 9445.280049 | View Importer |
| 27/Apr/2017 | 8541409000 | "1.Polikrystalichnyy silicon photovoltaic modul.Yavlyaye assembled in a module silicon photovoltaic solar cells that convert sunlight directly into electricity. Torhovelnoy mark" "TRINA" "model: Bar fotoelektrychnaTRINA Solar PC14 (II) -325W-Solar 26sht.TRINA DD14A (II) -330W-26sht.vyrobnyk: "" TRINA ENERGY STORAGE SOLUTIONS (JIANGSU) CO., LTD "" Country of CN.. " | CHINA | ***** | 1352 | 8950.239942 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -2SK3078 - 8 pieces; Polvoyy, Voltage: 10 V, current: 0.5 A; Power: 3 Vt.Vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. Not is the equipment or protective systems for use vvybuhonebezpechnomu environment. Do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - Toshiba SemiconductorVyrobnyk - Toshiba Semiconductor. " | CHINA | ***** | 0.001 | 3.257004625 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -IRFPE50PBF - 20 pieces; Field; drain-source voltage: 800 V, drain current: 7.8 A, Power: 190 Watts. Used in the manufacture telekomunikatsiynohoobladnannya, civil use. It is no equipment or protective systemamydlya use in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - SemiconductorsVyrobnyk Vishay - Vishay Semiconductors. " | CHINA | ***** | 0.13 | 13.82856425 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -IRF1010NPBF - 30 pcs, Field, drain-source voltage of 55V, drain current 72A.Potuzhnist scattering 130Vt.- IRF3205ZPBF - 40 pcs, Field, drain-source voltage 55V, 75A drain current, power dissipation 170Vt. - IRF530NPBF - 100 pieces; Field; Napruhastik-source: 100V; current drain: 17A; power dissipation: 79Vt. - IRF7341TRPBF- 100 pieces; Field; drain-source voltage of 55 V, current flow: 4,7 A; power: 2W. - IRF7389PBF - 200 pieces; Field; current: 7,3A, Voltage 30V drain-source, power dissipation, 2,5Vt. - IRF7416TRPBF - 100 pieces; Field; Napruhast -30V to-drain, drain current: -10A, Power: 2,5Vt. - IRF8313TRPBF - 50 pieces; Field; vytik30V-voltage drain, drain current: 9,7A; Power: 2W. - IRF9Z24NPBF - 1000 pieces; Field; Power drain-source -55 V drain current: -12 A; Power: 45W. - IRFH5010TR2 - 40 pcs, Field, drain-source voltage of 100 V, the drain current of 13 A; Power: 3.6 watt. - IRLB3813 - 50 pieces, Field, H apruha drain-source 30 V, drain current of 260 A, 230 W power dissipation. -IRLML0030TRPBF - 2500 pcs; Field; Power drain-source: 30V, drain current 5,3A, power dissipation 1,3Vt. - IRLML0060TRPBF - 3000 pcs; Field; Napruhastik-source: 60 V; Current drain: 2,7A, Power dissipation: 1.25 W. -IRLR2905TRPBF - 200 pieces; Field; Power drain-source 16 V; Drain current: 42A, power dissipation of 110 watts. - IRLU024N - 40 pieces; Field; Power flow-vytik60V, 56A drain current. Powerful Number scattering 42Vt. Used inproduction telecommunications equipment, civilian purposes. Not yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi. Do not have a membership transmitters or transmitters and a means pryymachiv.Ne spetspryznachennya.Krayina production - CNTorhovelna mark - International RectifierVyrobnyk - International Rectifier " | CHINA | ***** | 4.177 | 626.0785965 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -FDS4935A - 100 pieces; Field; drain-source voltage of -30V, the drain current of 7A. Potuzhnistrozsiyuvannya 2W. Used in the manufacture of telecommunications equipment, civilian purposes. It is not equipment dlyazastosuvannya or protective systems in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - Fairchild SemiconductorVyrobnyk - Fairchild Semiconductor. " | CHINA | ***** | 0.028 | 10.34288591 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -2SK2850 - 10 pieces; Polvoyy, Voltage: 900 V; current: 6 A, Power: 125 Vt.Vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. It is not equipment or protective systems for use vvybuhonebezpechnomu environment. Do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - ElectricVyrobnyk Fuji - Fuji Electric. " | CHINA | ***** | 0.112 | 10.4855723 | View Importer |
| 26/Apr/2017 | 8541290010 | "1.Tranzystory field powerful silicon, transistor BLF571,112 - 60 pieces; Transistor BLF184XRU - 20 pieces, is a powerful high-FETs created using LDMOS - shifted diffuznoyi-MOS technology based on silicon. Used in band amplifier circuit DMX- , transmitters for digital production telebachennya.Krayina PH trademark NXPVyrobnyk NXP Semiconductors. " | PHILIPPINES | ***** | 1.5 | 4490.533359 | View Importer |
Our market research report and Ukraine export statistics of silicon covers market share of Ukrainian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Ukraine. Few shipment records with a small number of important columns from Ukraine export data of sunglass are given above. Other hidden fields such as Ukrainian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Ukraine customs data of sunglass. To view more shipment records of sunglass export data of Ukraine, you can set a filter by Country Name or HS Code on the left side.
To get complete sunglass export statistics of Ukraine, simply fill the Request Demo Form. You can also drop your queries through info@exportgenius.in or +91-11-47048012.
Are you looking for Ukraine buyers or importers of silicon