Check Russia import data of h t under HS code 3818. Get import data of Russia for HS code 3818
| Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
|---|---|---|---|---|---|---|---|---|---|
| 12/Nov/2017 | 3818009000 | The substrate in the form of a disk, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY / | AXT | CHINA | *** | *** | 19.273 | 24236,62 | View Importer |
| 25/Nov/2017 | 3818009000 | The substrate in the form of a disk, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY / | AXT | CHINA | *** | *** | 21.18 | 50092,3 | View Importer |
| 20/Nov/2017 | 3818009000 | Substrate monocrystalline gallium arsenide GAAS (III / V) with successive grown heteroepitaxial layers based on gallium arsenide COMPOUNDS GAAS (III / V), used in production of the laser device. | ABSENT | TAIWAN CHINA | *** | *** | 0.9 | 39600 | View Importer |
| 15/Nov/2017 | 3818001000 | DOPED SILICON FOR USE IN ELECTRONIC production process DEVICES AND CIRCUITS: high purity silicon doped with boron, the ingot (1 piece), 4 '(111), 6K-17K ohm / cm, diameter 103 + _1,00 MM, serial no 46 -0189-10, YEAR | TOPSIL | DENMARK | *** | *** | 13.74 | 40725,06 | View Importer |
| 15/Nov/2017 | 3818001000 | DOPED SILICON in a plate shape (2050 pcs.) With double-sided polishing. PLATES MADE OF SILICON HIGH QUALITY method of growing Czochralski silicon THICKNESS 750-800 microns. It is intended for their own production, TO SEE. | ABSENT | KOREA REPUBLIC OF | *** | *** | 660.1 | 124700,27 | View Importer |
| 15/Nov/2017 | 3818009000 | Monocrystalline wafers silicon carbide polished on both sides, vanadium-doped, semi-insulating, with the same conductivity over the entire surface of the plate to the ISP. As a basis for IZGOTOVLENIYAI heterostructures for microelectronics | SICC | CHINA | *** | *** | 2.36 | 38318,05 | View Importer |
| 01/Sep/2017 | 3818009000 | SINGLE CRYSTAL PLATE high resistivity gallium arsenide compensate CHROME (GAAS: CR), NOT polished 4-inch diameter (102 +/- 0.5 mm), the thickness of 800 +/- 20 microns, is intended for manufacturing detectors (sensors) REGISTRATION:: :::: | *** | RUSSIA | 1,5 | *** | 1.5 | 2385,26 | View Importer |
| 11/Sep/2017 | 3818001000 | High-resistivity silicon wafer. Diameter of 100 mm, thickness of 460 microns. SOURCE MATERIAL FOR MANUFACTURING CRYSTAL INTEGRATED CIRCUITS: GREAT ASCENT INTERNATIONAL LIMITED GREAT ASCENT INTERNATIONAL LIMITED 100 | *** | JAPAN | 2,4 | *** | 2.4 | 7170 | View Importer |
| 26/Sep/2017 | 3818009000 | The semiconductor wafer (substrate) for the manufacture of heteroepitaxial structures. SHAPED disk diameter (50.0-100.0 +/- 0.3 mm) and 0.35-0.45 +/- 0.015-0.025 THICKNESS MM) doping chemicals. INTENDED TO BASE rogue | *** | JAPAN | 15,4 | *** | 15.4 | 29750 | View Importer |
| 25/Sep/2017 | 3818001000 | Silicon-doped (doping with phosphorus): a single-crystal (Czochralski method) of silicon wafers WAFER TYPE M2 156 HN84W WBC FAS180 -734400 PCS for use in the production of solar modules:. FORM: PSEVDOKVADRAT (rounded corners) edge length: | *** | NORWAY | 7565 | *** | 7565 | 640749,3 | View Importer |
| 07/Sep/2017 | 3818009000 | INP SUBSTRATE disc-shaped, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY INP SUBSTRATE | *** | CHINA | 0,51 | *** | 0.51 | 4453,74 | View Importer |
| 04/Sep/2017 | 3818001000 | SILICON MONOKRISTALICHESKY, alloyed plate DO NOT WASTE: 100mm P <100> 12 OHM * CM-300SHT. : "PAI HAUNG TECHNOLOGY CO," Taiwan. ABSENT. 0 | *** | TAIWAN CHINA | 7,2 | *** | 7.2 | 4129,37 | View Importer |
| 05/Sep/2017 | 3818009000 | Wafer in the form of discs 100 mm in diameter, thickness of up to 0.7mm MADE gallium arsenide (GAAS), on whose surface Apply epitaxial heterostructures FROM thin layers of gallium arsenide (GAAS) and aluminum arsenide gallium (: AL | *** | TAIWAN CHINA | 0,68 | *** | 0.68 | 31394,35 | View Importer |
| 04/Sep/2017 | 3818009000 | Substrate monocrystalline gallium arsenide GAAS (III / V) with successive grown heteroepitaxial layers based on gallium arsenide COMPOUNDS GAAS (III / V), used in production of the laser device. Heteroepitaxial substrate on | *** | TAIWAN CHINA | 9 | *** | 9 | 135200 | View Importer |
Our market research report and Russia export statistics of h t covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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