Russia Import Data of H T under HS Code 3818009000

Check Russia import data of h t under HS code 3818009000. Get import data of Russia for HS code 3818009000

3818009000  
STAT DECLARATION NO CUSTOMS CODE BROKER OR DECLARANT NUMBER DIRECTION DIRECTION EN CUSTOMS MODE SENDER ID SENDER EXPORTER NAME SENDING COUNTRY CODE SENDING COUNTRY SENDER ADDRESS SENDER ADDRESS EN OKTAT SENDER TOTAL ITEMS NUMBER OF PLACES RECIPIENT INN RECIPIENT RECIPIENT COUNTRY CODE RECIPIENT COUNTRY DESTINATION ADDRESS DESTINATION ADDRESS EN RECEIVER OKATO TIN FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT EN RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT EN OKATO RESPONSIBLE FOR FINANCIAL SETTLEMENT TRADING COUNTRY CODE TRADING COUNTRY TOTAL CUSTOMS VALUE CUSTOMS VALUE CURRENCY CODE TIN OF THE DECLARANT NAME OF THE DECLARANT NAME OF THE DECLARANT EN ADDRESS OF THE DECLARANT ADDRESS OF THE DECLARANT EN OKPO DECLARANT COUNTRY OF DEPARTURE COUNTRY OF DEPARTURE EN COUNTRY CODE OF DEPARTURE COUNTRY CODE OF DESTINATION COUNTRY OF DESTINATION COUNTRY DESTINATION INDICATION OF CONTAINER TRAFFIC DELIVERY CONDITION CODE GOODS DELIVERY POINT PLACE CONTRACT CURRENCY CODE TOTAL AMOUNT ON THE ACCOUNT EXCHANGE RATE TRANSPORT AT THE BORDER CODE TRANSPORT AT THE BORDER PRODUCT DESCRIPTION AND SPECIFICATIONS MANUFACTURER COMPANY MANUFACTURER COMPANY EN PRODUCT PLACES QUANTITY ADDITIONAL UNIT COUNTRY OF ORIGIN CODE GROSS WEIGHT KG PREFERENCES PREFERENCES EN QUOTA INVOICE VALUE SYMPTOM CCC METHOD FOR DETERMINING THE VEHICLE CUSTOMS COST RELEASE DATE OF CARGO PAYMENT AMOUNT USD PAYMENT AMOUNT RUB
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
12/Nov/2017 3818009000 The substrate in the form of a disk, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY / AXT CHINA *** *** 19.273 24236,62 View Importer
25/Nov/2017 3818009000 The substrate in the form of a disk, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY / AXT CHINA *** *** 21.18 50092,3 View Importer
20/Nov/2017 3818009000 Substrate monocrystalline gallium arsenide GAAS (III / V) with successive grown heteroepitaxial layers based on gallium arsenide COMPOUNDS GAAS (III / V), used in production of the laser device. ABSENT TAIWAN CHINA *** *** 0.9 39600 View Importer
15/Nov/2017 3818009000 Monocrystalline wafers silicon carbide polished on both sides, vanadium-doped, semi-insulating, with the same conductivity over the entire surface of the plate to the ISP. As a basis for IZGOTOVLENIYAI heterostructures for microelectronics SICC CHINA *** *** 2.36 38318,05 View Importer
01/Sep/2017 3818009000 SINGLE CRYSTAL PLATE high resistivity gallium arsenide compensate CHROME (GAAS: CR), NOT polished 4-inch diameter (102 +/- 0.5 mm), the thickness of 800 +/- 20 microns, is intended for manufacturing detectors (sensors) REGISTRATION:: :::: *** RUSSIA 1,5 *** 1.5 2385,26 View Importer
26/Sep/2017 3818009000 The semiconductor wafer (substrate) for the manufacture of heteroepitaxial structures. SHAPED disk diameter (50.0-100.0 +/- 0.3 mm) and 0.35-0.45 +/- 0.015-0.025 THICKNESS MM) doping chemicals. INTENDED TO BASE rogue *** JAPAN 15,4 *** 15.4 29750 View Importer
07/Sep/2017 3818009000 INP SUBSTRATE disc-shaped, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY INP SUBSTRATE *** CHINA 0,51 *** 0.51 4453,74 View Importer
05/Sep/2017 3818009000 Wafer in the form of discs 100 mm in diameter, thickness of up to 0.7mm MADE gallium arsenide (GAAS), on whose surface Apply epitaxial heterostructures FROM thin layers of gallium arsenide (GAAS) and aluminum arsenide gallium (: AL *** TAIWAN CHINA 0,68 *** 0.68 31394,35 View Importer
04/Sep/2017 3818009000 Substrate monocrystalline gallium arsenide GAAS (III / V) with successive grown heteroepitaxial layers based on gallium arsenide COMPOUNDS GAAS (III / V), used in production of the laser device. Heteroepitaxial substrate on *** TAIWAN CHINA 9 *** 9 135200 View Importer

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Our market research report and Russia export statistics of h t covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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