Lookup Russia transistor mosfet imports under HS code 85 from Korea Republic Of. Search transistor mosfet import data under HS code 85 from Korea Republic Of.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
08/Nov/2017 | 8541290000 | Parts for assemblage and repair of car amplifier audio frequency metal-oxide field effect transistors IRF 3205 MOSFET 200W (MOS METALL OCSIDE) 2600 PCS. SUPPLIED AS COMPONENTS for their own needs PREDPRIYATIYA.POGRESHNOST SHIPMENT +/- 5% of CO | PRIDE | KOREA REPUBLIC OF | 2600 | PC | 5.2 | 390 | View Importer |
07/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NOT SCRAP ELECTRIC) MOSFET power dissipation 2.5 Tues. INFINEON TECHNOLOGIES WITHOUT TRADEMARK INFINEON BSO613SPV G B / 3 H | *** | KOREA REPUBLIC OF | *** | KG | **** | 1,95 | View Importer |
07/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 15.6 BT VISHAY SEMICONDUCTORS WITHOUT TRADEMARK VISHAY SIR836DP-T1-GE3 B / 3 H | *** | KOREA REPUBLIC OF | 0,01 | KG | 0.01 | 2,62 | View Importer |
07/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 136 BT VISHAY SEMICONDUCTORS WITHOUT TRADEMARK VISHAY SUD50P08-25L-E3 B / 3 H | *** | KOREA REPUBLIC OF | 0,02 | KG | 0.02 | 8,34 | View Importer |
07/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NOT SCRAP ELECTRIC) MOSFET power dissipation 1.25 BT bipolar transistor power dissipation 1 W bipolar transistor power dissipation 1 W power bipolar transistor | *** | KOREA REPUBLIC OF | 0,03 | KG | 0.03 | 12,97 | View Importer |
07/Sep/2017 | 8541210000 | Transistors with power dissipation least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 0.26 BT NEXPERIA WITHOUT TRADEMARK NEXPERIA BSS138BKW, 115 B / H 100 | *** | KOREA REPUBLIC OF | 0,02 | KG | 0.02 | 7,37 | View Importer |
07/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of 31 W power dissipation of the bipolar transistor BT 1 MOSFET power dissipation BT 91 ON SEMICONDUCTOR / FAIRCHILD WITHOUT TOVA | *** | KOREA REPUBLIC OF | 0,03 | KG | 0.03 | 14,61 | View Importer |
15/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-channel available power dissipation is 33 W, the voltage source-drain 650, drain current 11 A HULL TYPE TO-220F, CLASSIFICATION CODE 3417831 is for use in SMPS converts | *** | KOREA REPUBLIC OF | 0,01 | KG | 0.01 | 5,02 | View Importer |
15/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation 2.5W, DRAIN-SOURCE VOLTAGE 60 V, the drain current of 1.4 A HULL TYPE SOT-223, 6,340,128 CLASSIFICATION CODE FOR PCB RADIO EQUIPMENT DIODES , INC. DI | *** | KOREA REPUBLIC OF | *** | KG | **** | 10,61 | View Importer |
15/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation of 2.5 W, the voltage source-drain 100 V, the drain current 4.5 A HULL TYPE 8-SOIC, CLASSIFICATION CODE 6,340,128, is intended for mounting on printed circuit boards RADIO EQUIPMENT ON | *** | KOREA REPUBLIC OF | *** | KG | **** | 9,35 | View Importer |
28/Sep/2017 | 8542399010 | Monolithic integrated circuits: Driver MOSFET-TRANSISTORS CM. ATTACHMENT DRIVER MOSFET-Transistors - THIS chips consist of two inverts the driver. Power dissipation - 470 MW, voltage - 4.5 V - 18 V. USED IN ISTO: DRA | *** | KOREA REPUBLIC OF | 0,03 | KG | 0.03 | 124,7 | View Importer |
28/Sep/2017 | 8541290000 | MOSFET TYPE SEMICONDUCTOR - silicon is used in the power supply TFT panels: POWER TRANSISTOR IRF7416PBF- THIS SINGLE P-channel HEXFET MOSFET HOUSING SO-8, the maximum drain-source voltage - 30 V, the range of nominal ON | *** | KOREA REPUBLIC OF | 0,27 | KG | 0.27 | 220,12 | View Importer |
26/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistor: MOSFET MANUFACTURER: ON SEMICONDUCTOR ROHS: CORRESPONDS ROHS DETAILS OF TECHNOLOGY: SI ASSEMBLY TYPE: SMD / SMT PACKAGING / BLOCK: POWER-56-8 NUMBER CHANNEL 1 CHANNEL TRANSISTOR POLARITY: N-CHANNEL VDS - | *** | KOREA REPUBLIC OF | 0,7 | KG | 0.7 | 3787,06 | View Importer |
19/Sep/2017 | 8541290000 | Transistors, EXCEPT phototransistor used in the system of industrial electronics MOSFET with a channel type N for single hole mounting on a printed circuit board adapted for devices of industrial electronics. The breakdown voltage of the drain-source 60 | *** | KOREA REPUBLIC OF | 2,18 | KG | 2.18 | 765,49 | View Importer |
19/Sep/2017 | 8541210000 | TRANSISTORS EXCEPT phototransistor dissipation of less than 1 W, used in the system INDUSTRIAL ELECTRONICS MOSFETs with channel N TYPE SMD USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. VOLTAGE PR | *** | KOREA REPUBLIC OF | 1,58 | KG | 1.58 | 1988,66 | View Importer |
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