Russia Transistor Mosfet Imports under HS Code 85 from Korea Republic Of

Lookup Russia transistor mosfet imports under HS code 85 from Korea Republic Of. Search transistor mosfet import data under HS code 85 from Korea Republic Of.

85   Korea Republic Of  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
08/Nov/2017 8541290000 Parts for assemblage and repair of car amplifier audio frequency metal-oxide field effect transistors IRF 3205 MOSFET 200W (MOS METALL OCSIDE) 2600 PCS. SUPPLIED AS COMPONENTS for their own needs PREDPRIYATIYA.POGRESHNOST SHIPMENT +/- 5% of CO PRIDE KOREA REPUBLIC OF 2600 PC 5.2 390 View Importer
07/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NOT SCRAP ELECTRIC) MOSFET power dissipation 2.5 Tues. INFINEON TECHNOLOGIES WITHOUT TRADEMARK INFINEON BSO613SPV G B / 3 H *** KOREA REPUBLIC OF *** KG **** 1,95 View Importer
07/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 15.6 BT VISHAY SEMICONDUCTORS WITHOUT TRADEMARK VISHAY SIR836DP-T1-GE3 B / 3 H *** KOREA REPUBLIC OF 0,01 KG 0.01 2,62 View Importer
07/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 136 BT VISHAY SEMICONDUCTORS WITHOUT TRADEMARK VISHAY SUD50P08-25L-E3 B / 3 H *** KOREA REPUBLIC OF 0,02 KG 0.02 8,34 View Importer
07/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NOT SCRAP ELECTRIC) MOSFET power dissipation 1.25 BT bipolar transistor power dissipation 1 W bipolar transistor power dissipation 1 W power bipolar transistor *** KOREA REPUBLIC OF 0,03 KG 0.03 12,97 View Importer
07/Sep/2017 8541210000 Transistors with power dissipation least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 0.26 BT NEXPERIA WITHOUT TRADEMARK NEXPERIA BSS138BKW, 115 B / H 100 *** KOREA REPUBLIC OF 0,02 KG 0.02 7,37 View Importer
07/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of 31 W power dissipation of the bipolar transistor BT 1 MOSFET power dissipation BT 91 ON SEMICONDUCTOR / FAIRCHILD WITHOUT TOVA *** KOREA REPUBLIC OF 0,03 KG 0.03 14,61 View Importer
15/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS: MOSFET N-channel available power dissipation is 33 W, the voltage source-drain 650, drain current 11 A HULL TYPE TO-220F, CLASSIFICATION CODE 3417831 is for use in SMPS converts *** KOREA REPUBLIC OF 0,01 KG 0.01 5,02 View Importer
15/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation 2.5W, DRAIN-SOURCE VOLTAGE 60 V, the drain current of 1.4 A HULL TYPE SOT-223, 6,340,128 CLASSIFICATION CODE FOR PCB RADIO EQUIPMENT DIODES , INC. DI *** KOREA REPUBLIC OF *** KG **** 10,61 View Importer
15/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation of 2.5 W, the voltage source-drain 100 V, the drain current 4.5 A HULL TYPE 8-SOIC, CLASSIFICATION CODE 6,340,128, is intended for mounting on printed circuit boards RADIO EQUIPMENT ON *** KOREA REPUBLIC OF *** KG **** 9,35 View Importer
28/Sep/2017 8542399010 Monolithic integrated circuits: Driver MOSFET-TRANSISTORS CM. ATTACHMENT DRIVER MOSFET-Transistors - THIS chips consist of two inverts the driver. Power dissipation - 470 MW, voltage - 4.5 V - 18 V. USED IN ISTO: DRA *** KOREA REPUBLIC OF 0,03 KG 0.03 124,7 View Importer
28/Sep/2017 8541290000 MOSFET TYPE SEMICONDUCTOR - silicon is used in the power supply TFT panels: POWER TRANSISTOR IRF7416PBF- THIS SINGLE P-channel HEXFET MOSFET HOUSING SO-8, the maximum drain-source voltage - 30 V, the range of nominal ON *** KOREA REPUBLIC OF 0,27 KG 0.27 220,12 View Importer
26/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistor: MOSFET MANUFACTURER: ON SEMICONDUCTOR ROHS: CORRESPONDS ROHS DETAILS OF TECHNOLOGY: SI ASSEMBLY TYPE: SMD / SMT PACKAGING / BLOCK: POWER-56-8 NUMBER CHANNEL 1 CHANNEL TRANSISTOR POLARITY: N-CHANNEL VDS - *** KOREA REPUBLIC OF 0,7 KG 0.7 3787,06 View Importer
19/Sep/2017 8541290000 Transistors, EXCEPT phototransistor used in the system of industrial electronics MOSFET with a channel type N for single hole mounting on a printed circuit board adapted for devices of industrial electronics. The breakdown voltage of the drain-source 60 *** KOREA REPUBLIC OF 2,18 KG 2.18 765,49 View Importer
19/Sep/2017 8541210000 TRANSISTORS EXCEPT phototransistor dissipation of less than 1 W, used in the system INDUSTRIAL ELECTRONICS MOSFETs with channel N TYPE SMD USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. VOLTAGE PR *** KOREA REPUBLIC OF 1,58 KG 1.58 1988,66 View Importer

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