Russia Transistor Mosfet Imports under HS Code 8541 from United States

Lookup Russia transistor mosfet imports under HS code 8541 from United States. Search transistor mosfet import data under HS code 8541 from United States.

8541   United States  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
13/Sep/2017 8541290000 FET TRANSISTOR PD55003-E STMICROELECTRONICS PRODUCTION COMPANY IS RF MOSFETs. ADVANTAGES: LOW OPERATING CURRENT AND LOW VOLTAGE. Used in network switches, valves. Transistor Polarity: N-CHANNEL. ID *** UNITED STATES 1,94 KG 1.94 13068 View Importer
05/Sep/2017 8541290000 Transistor: IRF7506TRPBF TRANSISTOR MANUFACTURING COMPANY INTERNATIONAL RECTIFIER IS MOSFET. Designed for use in telecommunications equipment, in the means of communication to reduce the interference level and reliability Transistor *** UNITED STATES 0,03 KG 0.03 299 View Importer
12/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET, the power dissipation BT 878: MOSFET 960 W power dissipation IXYS CORPORATION WITHOUT TRADEMARK B / H B IXTK90N25L2 / H 2 INFINEON / IR without commodity *** UNITED STATES 0,05 KG 0.05 38,54 View Importer
12/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 44,5 VT MOSFET power dissipation 55W MOSFET power dissipation 60W MOSFET power dissipation of 20 *** UNITED STATES 0,24 KG 0.24 121,49 View Importer
12/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NOT SCRAP ELECTRIC) MOSFET power dissipation 1 W INFINEON / IR WITHOUT A TRADEMARK B / N AUIRFL024NTR B / N 526 *** UNITED STATES 0,53 KG 0.53 241,2 View Importer
06/Sep/2017 8541290000 Transistors for use in fiber-optic technology TRANSISTOR MOSFET N-CH 20V 1.2A SOT-23 FAIRCHILD SEMICONDUCTOR, PHILIPPINES NO NO NO NO 3000 *** UNITED STATES 1 KG 1 132,9 View Importer
13/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, dissipated power 125 W, the voltage source-drain 150 V, the drain current 28 A HULL TYPE DUALCOOL-56-8, CLASSIFICATION CODE 3417831 is for use in switching power supply, PRL *** UNITED STATES *** KG **** 6,88 View Importer
13/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, dissipated power 125 W, the voltage source-drain 200, drain current 18 A HULL TYPE TO-220AB, CLASSIFICATION CODE 3417831 is for use in switching power supply CONVERTING *** UNITED STATES 1,37 KG 1.37 467,47 View Importer
27/Sep/2017 8541290000 MOSFET N-CHANNEL "TK6A65D (STA4, Q, M)" C dissipation 45W, drain-source voltage 650V, DIRECT CURRENT FLOW 6A. Designed for use in switching regulator VOLTAGE. TYPE SEMICONDUCTOR - SILICON. : MOS transistors. TOSHIBA *** UNITED STATES 5,24 KG 5.24 380 View Importer
18/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source 1 kV, 6.5 A LEAKAGE CURRENT, 160 POWER TSR. CDF *** UNITED STATES 0,08 KG 0.08 21,39 View Importer
18/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. The breakdown voltage of the drain-source 40 V, 259 A CURRENT LEAK, power 156 Tues CDF *** UNITED STATES 0,18 KG 0.18 70,58 View Importer
24/Sep/2017 8541290000 Other transistors, phototransistor EXCEPT: MOSFETs with channel N type intended for devices of industrial electronics. VOLTAGE Drain-Source Breakdown 20 V LEAKAGE CURRENT 8 A POWER 21.9 CS. BODY SO-8. LOCATED ON TAPE PACKED *** UNITED STATES 0,01 KG 0.01 5,22 View Importer
24/Sep/2017 8541290000 Other transistors, phototransistor EXCEPT: MOSFETs with channel P TYPE for single hole mounting on a printed circuit board adapted for devices of industrial electronics. VOLTAGE Drain-Source Breakdown 20 V CONTINUOUS LEAKAGE CURRENT 4 A POWER *** UNITED STATES 0,01 KG 0.01 1,77 View Importer
25/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation 57W, the voltage source-drain 30, drain current 54 A HULL TYPE TO-252-3, CLASSIFICATION CODE 3417831 is for use in SMPS converts *** UNITED STATES 0,84 KG 0.84 222,2 View Importer
25/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS: MOSFET P-CHANNEL dissipated power of 1 W, the voltage source-drain 30, drain current is 6 A HULL TYPE SOT-23-3, 6,340,128 CLASSIFICATION CODE FOR PCB RADIO EQUIPMENT TOSHIBA TOSHIBA SS *** UNITED STATES 0,1 KG 0.1 229,86 View Importer

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