Russia Transistor Mosfet Imports under HS Code 8541290000 from Taiwan China

Lookup Russia transistor mosfet imports under HS code 8541290000 from Taiwan China. Search transistor mosfet import data under HS code 8541290000 from Taiwan China.

8541290000   Taiwan China  
STAT DECLARATION NO CUSTOMS CODE BROKER OR DECLARANT NUMBER DIRECTION DIRECTION EN CUSTOMS MODE SENDER ID SENDER EXPORTER NAME SENDING COUNTRY CODE SENDING COUNTRY SENDER ADDRESS SENDER ADDRESS EN OKTAT SENDER TOTAL ITEMS NUMBER OF PLACES RECIPIENT INN RECIPIENT RECIPIENT COUNTRY CODE RECIPIENT COUNTRY DESTINATION ADDRESS DESTINATION ADDRESS EN RECEIVER OKATO TIN FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT EN RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT EN OKATO RESPONSIBLE FOR FINANCIAL SETTLEMENT TRADING COUNTRY CODE TRADING COUNTRY TOTAL CUSTOMS VALUE CUSTOMS VALUE CURRENCY CODE TIN OF THE DECLARANT NAME OF THE DECLARANT NAME OF THE DECLARANT EN ADDRESS OF THE DECLARANT ADDRESS OF THE DECLARANT EN OKPO DECLARANT COUNTRY OF DEPARTURE COUNTRY OF DEPARTURE EN COUNTRY CODE OF DEPARTURE COUNTRY CODE OF DESTINATION COUNTRY OF DESTINATION COUNTRY DESTINATION INDICATION OF CONTAINER TRAFFIC DELIVERY CONDITION CODE GOODS DELIVERY POINT PLACE CONTRACT CURRENCY CODE TOTAL AMOUNT ON THE ACCOUNT EXCHANGE RATE TRANSPORT AT THE BORDER CODE TRANSPORT AT THE BORDER PRODUCT DESCRIPTION AND SPECIFICATIONS MANUFACTURER COMPANY MANUFACTURER COMPANY EN PRODUCT PLACES QUANTITY ADDITIONAL UNIT COUNTRY OF ORIGIN CODE GROSS WEIGHT KG PREFERENCES PREFERENCES EN QUOTA INVOICE VALUE SYMPTOM CCC METHOD FOR DETERMINING THE VEHICLE CUSTOMS COST RELEASE DATE OF CARGO PAYMENT AMOUNT USD PAYMENT AMOUNT RUB
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
05/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source 950, CURRENT LEAKAGE 38 A, the power dissipation *** TAIWAN CHINA 0,16 KG 0.16 186,68 View Importer
06/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. VOLTAGE Drain-Source Breakdown 70 V, 35 A LEAKAGE CURRENT, POWER 40 CS. lint *** TAIWAN CHINA 18,8 KG 18.8 5141,75 View Importer
27/Sep/2017 8541290000 Transistors with power dissipation MORE 1W. (NO ELECTRICAL SCRAP) MOSFET power dissipation 57W INFINEON TECHNOLOGIES WITHOUT TRADEMARK B / H B BSZ520N15NS3 G / H 9 *** TAIWAN CHINA 0,02 KG 0.02 7,94 View Importer
30/Sep/2017 8541290000 TRAZISTORY SEMICONDUCTOR, DISPERSION OVER POWER TRANSISTORS 1W :, EXCEPT phototransistor: MOSFET-TRANSISTOR, N-CHANNEL IN BLOCK TO-247. TECHNOLOGY X2-CLASS (ULTRA JUNCTION). VOLTAGE source-drain: 650V. Current: 80A. Channel resistance - *** TAIWAN CHINA 3,36 KG 3.36 1476,84 View Importer
20/Sep/2017 8541290000 Transistors for use in fiber-optic technology TRANSISTOR MOSFET P-CH 60V 3A SOT-23-6 DIODES INC., CHINA NO NO 3000 *** TAIWAN CHINA 4,9 KG 4.9 543,26 View Importer
21/Sep/2017 8541290000 Insulated-gate bipolar transistor, power 200W RASSEIVANIYA- .; FIELD MOSFET, N-CHANNEL, 125W power dissipation. (ELECTRICAL EQUIPMENT ARE NOT CROWBAR). APPLICATION: CONSTRUCTION OF RADIO-ELECTRONIC EQUIPMENT FOR INSTALLATION bipole *** TAIWAN CHINA 2,77 KG 2.77 467,04 View Importer
21/Sep/2017 8541290000 Other transistors, phototransistor EXCEPT: MOSFETs with channel N type intended for devices of industrial electronics. Breakdown voltage of the drain-source of 100 V, 1.7 A LEAKAGE CURRENT, POWER 2 watts. CASING SOT-223-4. LOCATED in the tape, pack *** TAIWAN CHINA 0,01 KG 0.01 2,75 View Importer
21/Sep/2017 8541290000 Other transistors, phototransistor EXCEPT: MOSFETs with channel N TYPE SMD HELD FOR DEVICES INDUSTRIAL ELECTRONICS. VOLTAGE Drain-Source Breakdown 25 V, 60 A LEAKAGE CURRENT, power dissipation 3W. HOUSING *** TAIWAN CHINA 0,02 KG 0.02 15,82 View Importer
28/Sep/2017 8541290000 Transistors, designed for use in electrotechnical assemblies GENERAL PURPOSE: MOSFET, P-CHANNEL, the breakdown voltage of the drain-source of 100 volts, continuous current 23 A LEAK SILICON CASE TO-220-3, SILICON MATERIAL. POWER PAC *** TAIWAN CHINA 3,35 KG 3.35 321,68 View Importer

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