Russia Transistor Mosfet Imports under HS Code 8541210000 from China

Lookup Russia transistor mosfet imports under HS code 8541210000 from China. Search transistor mosfet import data under HS code 8541210000 from China.

8541210000   China  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
13/Sep/2017 8541210000 Bipolar transistor power dissipation less than 1 Tues. (NOT SCRAP ELECTRIC) transistors with power dissipation LESS THAN 1W. (NOT SCRAP ELECTRIC) MOSFET power dissipation of 350 MW: Power 250mW NXP SEMICONDUCTORS WITHOUT THAT *** CHINA 0,11 KG 0.11 41,59 View Importer
05/Sep/2017 8541210000 Transistors with power dissipation LESS THAN 1W. (NO ELECTRICAL SCRAP) MOSFET power dissipation 0.45 W DIODES INCORPORATED WITHOUT TRADEMARK DIODES DMG1029SV-7 B / H 297 *** CHINA 0,07 KG 0.07 33,46 View Importer
14/Sep/2017 8541210000 Transistors with power dissipation LESS THAN 1W. (NO ELECTRICAL SCRAP) MOSFET power dissipation 0.83 BT ON SEMICONDUCTOR / FAIRCHILD WITHOUT TRADEMARK ON SEMICONDUCTOR / FAIRCHILD BS170 B / H 5 *** CHINA *** KG **** 1,61 View Importer
10/Sep/2017 8541210000 TRANSISTORS dissipation of less than 1W, EXCEPT phototransistor used in the production of household electronic equipment, ARE NOT CROWBAR ELECTRICAL: Bipolar transistors, MOSFETs N-TYPE CHANNEL. X2, BODY SC88, drain-source voltage *** CHINA 0,43 KG 0.43 715 View Importer
06/Sep/2017 8541210000 SEMICONDUCTOR TRANSISTORS: MOSFET N-channel, power dissipation 0.36 BT, the source-drain VOLTAGE 50V, 220V CURRENT MA 6,340,128 CLASSIFICATION CODE FOR PCB RADIO EQUIPMENT DIODES DIODES BSS138-7-F 9000 *** CHINA 0,26 KG 0.26 130,54 View Importer
05/Sep/2017 8541210000 TRANSISTORS SEMI: Semiconductor NPN bipolar transistor structure, the power dissipation 0.225 BT, collector-emitter voltage of 15 V, 50 mA, CLASSIFICATION CODE 6340128 FOR PCB RADIO EQUIPMENT MOSFET TR *** CHINA 0,01 KG 0.01 13,55 View Importer
22/Sep/2017 8541210000 TRANSISTORS EXCEPT phototransistor dissipation of less than 1 W: Transistor: MOSFET N-CHANNEL; FIELD; ASSEMBLY power supply. TYPE ASSEMBLY SMD / SMT BREAKDOWN VOLTAGE gate-source voltage of 16 V ON - resistance of the drain-source 16 MOHMS DISPERSION MOSCHNOS *** CHINA 0,6 KG 0.6 715 View Importer
29/Sep/2017 8541210000 Transistors with power dissipation LESS THAN 1W. (NO ELECTRICAL SCRAP) MOS TRANSISTOR PD - SCATTERING POWER TRANSISTORS 225 MW with driving PN TRANSITION PD - 300 MW power dissipation MOSFET power dissipation MILLIWATT 350 (MW *** CHINA 0,09 KG 0.09 44,1 View Importer
28/Sep/2017 8541210000 N-channel MOS transistors operating under saturated ASSEMBLY WITH BLOCKS temperature protection, overcurrent protection and voltage is intended to distribute power to the Car Alarm System MOSFET drain-source voltage Transit *** CHINA 2,19 KG 2.19 10693,99 View Importer
28/Sep/2017 8541210000 Transistor ASSEMBLY SMD INTENDED FOR USE IN TELECOMMUNICATIONS EQUIPMENT ASSEMBLY transistor consisting of two N-channel MOSFETs and P-channel individual transistors, the constant drain current through the channel 500 milliamps *** CHINA 0,25 KG 0.25 566,15 View Importer
20/Sep/2017 8541210000 N-channel MOS transistor, INTENDED FOR POWER DISTRIBUTION SYSTEMS car alarms MOSFET maximum constant drain-source voltage 60V, power dissipation MILIVT 150 (0,15VT), the maximum drain current 0.3A, Bldg *** CHINA 0,3 KG 0.3 162,41 View Importer
17/Sep/2017 8541210000 TRANSISTORS Power Dissipation 0.325 BT TYPE SEMICONDUCTOR SILICON-: MOSFET N-CHANNEL WITH NX7002AK are intended for use in the control circuit RELAY, SWITCHING, HIGH AS A KEY FOR SWITCHING LOAD IN THE LOWER FL *** CHINA 0,25 KG 0.25 313,56 View Importer
17/Sep/2017 8541210000 TRANSISTORS Power Dissipation 0.325 BT TYPE SEMICONDUCTOR SILICON-: MOSFET N-CHANNEL WITH NX7002AK are intended for use in the control circuit RELAY, SWITCHING, HIGH AS A KEY FOR SWITCHING LOAD IN THE LOWER FL *** CHINA 0,19 KG 0.19 235,17 View Importer
29/Sep/2017 8541210000 Transistors, EXCEPT phototransistor power dissipation less than 1 W, used in the system of industrial electronics MOSFETs with channel P TYPE SMD HELD FOR DEVICES INDUSTRIAL ELECTRONICS. VOLTAGE PR *** CHINA 0,08 KG 0.08 13,57 View Importer
25/Sep/2017 8541210000 SEMICONDUCTOR TRANSISTORS: MOSFET P-channel, power dissipation 0.75 VT, the voltage source-drain 40 V, current 2.3 A CLASSIFICATION CODE 6340128 FOR PCB RADIO EQUIPMENT VISHAY INTERTECHNOLOGY, INC. VISHAY SI2319 *** CHINA 0,01 KG 0.01 42,46 View Importer

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