Russia Transistor Mosfet Imports under HS Code 85 from China

Lookup Russia transistor mosfet imports under HS code 85 from China. Search transistor mosfet import data under HS code 85 from China.

85   China  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
07/Nov/2017 8541290000 Silicon semiconductor wafers with a field effect transistor (MOSFET), which is used in MANUFACTURING MOSFET and hybrid assemblies. DMS CHINA 1057 PC 0.6 1169,47 View Importer
13/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 200W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF5210PBF B / 10 H *** CHINA 0,06 KG 0.06 21,75 View Importer
13/Sep/2017 8541210000 Bipolar transistor power dissipation less than 1 Tues. (NOT SCRAP ELECTRIC) transistors with power dissipation LESS THAN 1W. (NOT SCRAP ELECTRIC) MOSFET power dissipation of 350 MW: Power 250mW NXP SEMICONDUCTORS WITHOUT THAT *** CHINA 0,11 KG 0.11 41,59 View Importer
13/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 2.5W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF7416TRPBF B / 30 H *** CHINA 0,07 KG 0.07 32,37 View Importer
11/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS, power dissipation 32-375 BT imported as raw materials (materials) for assembling the electronic module (card), studio flash units, portable mains power supply, the device raising and lowering of flash bulbs, the MOSFET *** CHINA 0,7 KG 0.7 270,25 View Importer
01/Sep/2017 8541290000 Other transistors, phototransistors EXCEPT: TRANSISTOR, low-voltage power MOSFET, CASING - TO-263-3, QTY CHANNELS - 1 BREAKDOWN VOLTAGE CURRENT-SOURCE - - 40 V, DC CURRENT LEAKAGE / FLOW - - 100 A, RESISTANCE CURRENT-SOURCE - 3.5 mOHMS, VOLTAGE *** CHINA 1,6 *** 1.6 1704,5 View Importer
13/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistor: TRANSISTOR MOSFET - GENERAL PURPOSE SMD, voltage 50 V LIMIT constant power dissipation FLOW - 1.3 BT 3HC SEMICONDUCTORS (HK) CO, LTD.. 3HC SEMICONDUCTORS 3HC SEMICONDUCTORS SOT *** CHINA 0,02 KG 0.02 21,64 View Importer
01/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET, the power dissipation 27.7 BT: bipolar transistor power dissipation 15W STMICROELECTRONICS WITHOUT TRADEMARK STMICROELECTRONICS STD2805T4 B / H 2 VISHA *** CHINA 0,01 *** 0.01 3,63 View Importer
01/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 830 BT IXYS CORPORATION WITHOUT TRADEMARK IXYS IXTH130N20T B / 3 H *** CHINA 0,01 *** 0.01 12,72 View Importer
05/Sep/2017 8541210000 Transistors with power dissipation LESS THAN 1W. (NO ELECTRICAL SCRAP) MOSFET power dissipation 0.45 W DIODES INCORPORATED WITHOUT TRADEMARK DIODES DMG1029SV-7 B / H 297 *** CHINA 0,07 KG 0.07 33,46 View Importer
05/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of the bipolar transistor BT 136, BT power dissipation 4.46 MOSFET power dissipation 2.5W bipolar transistor POWER *** CHINA 0,58 KG 0.58 315,14 View Importer
14/Sep/2017 8541210000 Transistors with power dissipation LESS THAN 1W. (NO ELECTRICAL SCRAP) MOSFET power dissipation 0.83 BT ON SEMICONDUCTOR / FAIRCHILD WITHOUT TRADEMARK ON SEMICONDUCTOR / FAIRCHILD BS170 B / H 5 *** CHINA *** KG **** 1,61 View Importer
05/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 1 W MICROCHIP TECHNOLOGY WITHOUT TRADEMARK MICROCHIP VP0808L-G B / H 5 *** CHINA 0,01 KG 0.01 7,12 View Importer
15/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NOT SCRAP ELECTRIC) MOSFET power dissipation 69W INFINEON / IR WITHOUT A TRADEMARK B / N IRLU2905PBF B / N 10 *** CHINA 0,02 KG 0.02 9,11 View Importer
15/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET, the power dissipation BT 2: MOSFET power dissipation 6.25 BT VISHAY SEMICONDUCTORS WITHOUT TRADEMARK B / N SIR826DP-T1-GE3 B / N 20 INFINEON / IR WITHOUT *** CHINA 0,04 KG 0.04 54,88 View Importer

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