Russia Trade Statistics of Transistor Mosfet Imports from China

Check Russia trade statistics of transistor mosfet imports from China. Find trade data analysis of Russia imports of transistor mosfet

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STAT DECLARATION NO CUSTOMS CODE BROKER OR DECLARANT NUMBER DIRECTION DIRECTION EN CUSTOMS MODE SENDER ID SENDER EXPORTER NAME SENDING COUNTRY CODE SENDING COUNTRY SENDER ADDRESS SENDER ADDRESS EN OKTAT SENDER TOTAL ITEMS NUMBER OF PLACES RECIPIENT INN RECIPIENT RECIPIENT COUNTRY CODE RECIPIENT COUNTRY DESTINATION ADDRESS DESTINATION ADDRESS EN RECEIVER OKATO TIN FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT EN RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT EN OKATO RESPONSIBLE FOR FINANCIAL SETTLEMENT TRADING COUNTRY CODE TRADING COUNTRY TOTAL CUSTOMS VALUE CUSTOMS VALUE CURRENCY CODE TIN OF THE DECLARANT NAME OF THE DECLARANT NAME OF THE DECLARANT EN ADDRESS OF THE DECLARANT ADDRESS OF THE DECLARANT EN OKPO DECLARANT COUNTRY OF DEPARTURE COUNTRY OF DEPARTURE EN COUNTRY CODE OF DEPARTURE COUNTRY CODE OF DESTINATION COUNTRY OF DESTINATION COUNTRY DESTINATION INDICATION OF CONTAINER TRAFFIC DELIVERY CONDITION CODE GOODS DELIVERY POINT PLACE CONTRACT CURRENCY CODE TOTAL AMOUNT ON THE ACCOUNT EXCHANGE RATE TRANSPORT AT THE BORDER CODE TRANSPORT AT THE BORDER PRODUCT DESCRIPTION AND SPECIFICATIONS MANUFACTURER COMPANY MANUFACTURER COMPANY EN PRODUCT PLACES QUANTITY ADDITIONAL UNIT COUNTRY OF ORIGIN CODE GROSS WEIGHT KG PREFERENCES PREFERENCES EN QUOTA INVOICE VALUE SYMPTOM CCC METHOD FOR DETERMINING THE VEHICLE CUSTOMS COST RELEASE DATE OF CARGO PAYMENT AMOUNT USD PAYMENT AMOUNT RUB
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
21/Sep/2017 9032890000 CONTROL UNIT ENGINE: CONTROL IN BLOCK - DRIVER FOR ENGINE power transistors with field control (MOSFET or IGBT) for surface mounting on printed circuit boards. It is designed to transmit control signals CONTROLLER *** CHINA 1,49 *** 1.49 1735,36 View Importer
07/Nov/2017 8541290000 Silicon semiconductor wafers with a field effect transistor (MOSFET), which is used in MANUFACTURING MOSFET and hybrid assemblies. DMS CHINA 1057 PC 0.6 1169,47 View Importer
13/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 200W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF5210PBF B / 10 H *** CHINA 0,06 KG 0.06 21,75 View Importer
13/Sep/2017 8541210000 Bipolar transistor power dissipation less than 1 Tues. (NOT SCRAP ELECTRIC) transistors with power dissipation LESS THAN 1W. (NOT SCRAP ELECTRIC) MOSFET power dissipation of 350 MW: Power 250mW NXP SEMICONDUCTORS WITHOUT THAT *** CHINA 0,11 KG 0.11 41,59 View Importer
13/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 2.5W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF7416TRPBF B / 30 H *** CHINA 0,07 KG 0.07 32,37 View Importer
11/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS, power dissipation 32-375 BT imported as raw materials (materials) for assembling the electronic module (card), studio flash units, portable mains power supply, the device raising and lowering of flash bulbs, the MOSFET *** CHINA 0,7 KG 0.7 270,25 View Importer
01/Sep/2017 8541290000 Other transistors, phototransistors EXCEPT: TRANSISTOR, low-voltage power MOSFET, CASING - TO-263-3, QTY CHANNELS - 1 BREAKDOWN VOLTAGE CURRENT-SOURCE - - 40 V, DC CURRENT LEAKAGE / FLOW - - 100 A, RESISTANCE CURRENT-SOURCE - 3.5 mOHMS, VOLTAGE *** CHINA 1,6 *** 1.6 1704,5 View Importer
13/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistor: TRANSISTOR MOSFET - GENERAL PURPOSE SMD, voltage 50 V LIMIT constant power dissipation FLOW - 1.3 BT 3HC SEMICONDUCTORS (HK) CO, LTD.. 3HC SEMICONDUCTORS 3HC SEMICONDUCTORS SOT *** CHINA 0,02 KG 0.02 21,64 View Importer
01/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET, the power dissipation 27.7 BT: bipolar transistor power dissipation 15W STMICROELECTRONICS WITHOUT TRADEMARK STMICROELECTRONICS STD2805T4 B / H 2 VISHA *** CHINA 0,01 *** 0.01 3,63 View Importer
01/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 830 BT IXYS CORPORATION WITHOUT TRADEMARK IXYS IXTH130N20T B / 3 H *** CHINA 0,01 *** 0.01 12,72 View Importer
05/Sep/2017 8541210000 Transistors with power dissipation LESS THAN 1W. (NO ELECTRICAL SCRAP) MOSFET power dissipation 0.45 W DIODES INCORPORATED WITHOUT TRADEMARK DIODES DMG1029SV-7 B / H 297 *** CHINA 0,07 KG 0.07 33,46 View Importer
05/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of the bipolar transistor BT 136, BT power dissipation 4.46 MOSFET power dissipation 2.5W bipolar transistor POWER *** CHINA 0,58 KG 0.58 315,14 View Importer
14/Sep/2017 8541210000 Transistors with power dissipation LESS THAN 1W. (NO ELECTRICAL SCRAP) MOSFET power dissipation 0.83 BT ON SEMICONDUCTOR / FAIRCHILD WITHOUT TRADEMARK ON SEMICONDUCTOR / FAIRCHILD BS170 B / H 5 *** CHINA *** KG **** 1,61 View Importer
05/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 1 W MICROCHIP TECHNOLOGY WITHOUT TRADEMARK MICROCHIP VP0808L-G B / H 5 *** CHINA 0,01 KG 0.01 7,12 View Importer
15/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NOT SCRAP ELECTRIC) MOSFET power dissipation 69W INFINEON / IR WITHOUT A TRADEMARK B / N IRLU2905PBF B / N 10 *** CHINA 0,02 KG 0.02 9,11 View Importer

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