Lookup Russia transistor mosfet imports under HS code 8541290000 from China. Search transistor mosfet import data under HS code 8541290000 from China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
07/Nov/2017 | 8541290000 | Silicon semiconductor wafers with a field effect transistor (MOSFET), which is used in MANUFACTURING MOSFET and hybrid assemblies. | DMS | CHINA | 1057 | PC | 0.6 | 1169,47 | View Importer |
13/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 200W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF5210PBF B / 10 H | *** | CHINA | 0,06 | KG | 0.06 | 21,75 | View Importer |
13/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 2.5W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF7416TRPBF B / 30 H | *** | CHINA | 0,07 | KG | 0.07 | 32,37 | View Importer |
11/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS, power dissipation 32-375 BT imported as raw materials (materials) for assembling the electronic module (card), studio flash units, portable mains power supply, the device raising and lowering of flash bulbs, the MOSFET | *** | CHINA | 0,7 | KG | 0.7 | 270,25 | View Importer |
01/Sep/2017 | 8541290000 | Other transistors, phototransistors EXCEPT: TRANSISTOR, low-voltage power MOSFET, CASING - TO-263-3, QTY CHANNELS - 1 BREAKDOWN VOLTAGE CURRENT-SOURCE - - 40 V, DC CURRENT LEAKAGE / FLOW - - 100 A, RESISTANCE CURRENT-SOURCE - 3.5 mOHMS, VOLTAGE | *** | CHINA | 1,6 | *** | 1.6 | 1704,5 | View Importer |
13/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistor: TRANSISTOR MOSFET - GENERAL PURPOSE SMD, voltage 50 V LIMIT constant power dissipation FLOW - 1.3 BT 3HC SEMICONDUCTORS (HK) CO, LTD.. 3HC SEMICONDUCTORS 3HC SEMICONDUCTORS SOT | *** | CHINA | 0,02 | KG | 0.02 | 21,64 | View Importer |
01/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET, the power dissipation 27.7 BT: bipolar transistor power dissipation 15W STMICROELECTRONICS WITHOUT TRADEMARK STMICROELECTRONICS STD2805T4 B / H 2 VISHA | *** | CHINA | 0,01 | *** | 0.01 | 3,63 | View Importer |
01/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 830 BT IXYS CORPORATION WITHOUT TRADEMARK IXYS IXTH130N20T B / 3 H | *** | CHINA | 0,01 | *** | 0.01 | 12,72 | View Importer |
05/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of the bipolar transistor BT 136, BT power dissipation 4.46 MOSFET power dissipation 2.5W bipolar transistor POWER | *** | CHINA | 0,58 | KG | 0.58 | 315,14 | View Importer |
05/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 1 W MICROCHIP TECHNOLOGY WITHOUT TRADEMARK MICROCHIP VP0808L-G B / H 5 | *** | CHINA | 0,01 | KG | 0.01 | 7,12 | View Importer |
15/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NOT SCRAP ELECTRIC) MOSFET power dissipation 69W INFINEON / IR WITHOUT A TRADEMARK B / N IRLU2905PBF B / N 10 | *** | CHINA | 0,02 | KG | 0.02 | 9,11 | View Importer |
15/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET, the power dissipation BT 2: MOSFET power dissipation 6.25 BT VISHAY SEMICONDUCTORS WITHOUT TRADEMARK B / N SIR826DP-T1-GE3 B / N 20 INFINEON / IR WITHOUT | *** | CHINA | 0,04 | KG | 0.04 | 54,88 | View Importer |
01/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL dissipated power 100 W, the voltage source-drain 100 V, the drain current of 25 A, HULL TYPE TO-252-3, CLASSIFICATION CODE 3417831 is for use in switching power supply CONVERTING | *** | CHINA | 1,26 | *** | 1.26 | 683,79 | View Importer |
13/Sep/2017 | 8541290000 | Field effect transistors STW34NM60N BASED MOSFETs. MAXIMUM drain-source voltage 600V. Power dissipation 250W. It used within a block of the BIP-01 AS PART voltage converter for cathodic protection "ENERGOMERA" PNKZ-PPC-M10 SERIES transistors in and | *** | CHINA | 1,21 | KG | 1.21 | 401,4 | View Importer |
05/Sep/2017 | 8541290000 | SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: MOSFET-TRANSISTORS, P-CHANNEL IN BLOCK TO-263AB, USED IN INSTRUMENT SMD TYPE SEMICONDUCTOR - SILICON, voltage 200V Drain current 26A, power dissipation 30 | *** | CHINA | 2 | KG | 2 | 1230,14 | View Importer |
Our market research report and Russia export statistics of transistor mosfet covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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